Kinetics of interlayer growth and changes in residual elastic strain during annealing of Mo/Si multilayers

R. S. Rosen; D. G. Stearns; M. E. Kassner; J. I. Koike; Y. Cheng; S. P. Vernon

doi:10.1016/0965-9773(93)90079-Q

Kinetics of interlayer growth and changes in residual elastic strain during annealing of Mo/Si multilayers

R. S. Rosen, D. G. Stearns, M. E. Kassner, J. I. Koike, Y. Cheng, S. P. Vernon

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The thermal stability of sputter-deposited Mo/Si multilayers was investigated by annealing studies at relatively low temperatures for various times. Two distinct stages of thermally-activated MoSi interlayer growth were found: a relatively rapid initial "surge" of approximately one monolayer, followed by a (slower) secondary "steady-state" growth that is diffusion controlled. The interdiffusion coefficients for the interlayer formed during deposition of Mo on Si are substantially higher than those of the interlayer formed during deposition of Si on Mo. It was also observed that significant residual tensile elastic strains develop within the Mo layer (normal to the multilayer) as a result of annealing. Explanations for these observed behaviors are presented.

Original language	English
Pages (from-to)	195-202
Number of pages	8
Journal	Nanostructured Materials
Volume	3
Issue number	1-6
DOIs	https://doi.org/10.1016/0965-9773(93)90079-Q
Publication status	Published - 1993

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@article{eb55991934bb40509be62597efdb5a6a,

title = "Kinetics of interlayer growth and changes in residual elastic strain during annealing of Mo/Si multilayers",

abstract = "The thermal stability of sputter-deposited Mo/Si multilayers was investigated by annealing studies at relatively low temperatures for various times. Two distinct stages of thermally-activated MoSi interlayer growth were found: a relatively rapid initial {"}surge{"} of approximately one monolayer, followed by a (slower) secondary {"}steady-state{"} growth that is diffusion controlled. The interdiffusion coefficients for the interlayer formed during deposition of Mo on Si are substantially higher than those of the interlayer formed during deposition of Si on Mo. It was also observed that significant residual tensile elastic strains develop within the Mo layer (normal to the multilayer) as a result of annealing. Explanations for these observed behaviors are presented.",

author = "Rosen, {R. S.} and Stearns, {D. G.} and Kassner, {M. E.} and Koike, {J. I.} and Y. Cheng and Vernon, {S. P.}",

note = "Funding Information: The authors wish to thank M.A. Vihardos for his invaluable contributions. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under contract No. W-7405-Eng-48.",

year = "1993",

doi = "10.1016/0965-9773(93)90079-Q",

language = "English",

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pages = "195--202",

journal = "Nanostructured Materials",

issn = "0965-9773",

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TY - JOUR

T1 - Kinetics of interlayer growth and changes in residual elastic strain during annealing of Mo/Si multilayers

AU - Rosen, R. S.

AU - Stearns, D. G.

AU - Kassner, M. E.

AU - Koike, J. I.

AU - Cheng, Y.

AU - Vernon, S. P.

N1 - Funding Information: The authors wish to thank M.A. Vihardos for his invaluable contributions. This work was performed under the auspices of the U.S. Department of Energy by Lawrence Livermore National Laboratory under contract No. W-7405-Eng-48.

PY - 1993

Y1 - 1993

N2 - The thermal stability of sputter-deposited Mo/Si multilayers was investigated by annealing studies at relatively low temperatures for various times. Two distinct stages of thermally-activated MoSi interlayer growth were found: a relatively rapid initial "surge" of approximately one monolayer, followed by a (slower) secondary "steady-state" growth that is diffusion controlled. The interdiffusion coefficients for the interlayer formed during deposition of Mo on Si are substantially higher than those of the interlayer formed during deposition of Si on Mo. It was also observed that significant residual tensile elastic strains develop within the Mo layer (normal to the multilayer) as a result of annealing. Explanations for these observed behaviors are presented.

AB - The thermal stability of sputter-deposited Mo/Si multilayers was investigated by annealing studies at relatively low temperatures for various times. Two distinct stages of thermally-activated MoSi interlayer growth were found: a relatively rapid initial "surge" of approximately one monolayer, followed by a (slower) secondary "steady-state" growth that is diffusion controlled. The interdiffusion coefficients for the interlayer formed during deposition of Mo on Si are substantially higher than those of the interlayer formed during deposition of Si on Mo. It was also observed that significant residual tensile elastic strains develop within the Mo layer (normal to the multilayer) as a result of annealing. Explanations for these observed behaviors are presented.

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U2 - 10.1016/0965-9773(93)90079-Q

DO - 10.1016/0965-9773(93)90079-Q

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VL - 3

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EP - 202

JO - Nanostructured Materials

JF - Nanostructured Materials

IS - 1-6

ER -

Kinetics of interlayer growth and changes in residual elastic strain during annealing of Mo/Si multilayers

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