The mechanism of kink in InP based InAlAs/InGaAs HEMTs is studied using HEMTs with a body contact (BC) electrode consisting of a buried p layer and a /Hype contact. Kink modification was directly observed by varying BC bias, which shows kink is an anomalous suppression of drain current at lowdrain bias, not a parasitic current at high bias. Based on this result, the origin of kink is discussed.
- Gallium indium arsenide
- High electron mobility transistors