TY - GEN
T1 - Knudsen pump based on silicon etching and thermal oxidation process for on-chip vacuum pumping
AU - Van Toan, Nguyen
AU - Inomata, Naoki
AU - Trung, Nguyen Huu
AU - Ono, Takahito
N1 - Funding Information:
Part of this work was performed in the Micro/Nanomachining Research Education Center (MNC) of Tohoku University, Sendai, Japan. This work was supported in part by JSPS KAKENHI for Young Scientists B (Grant number: 17K14095), and also supported by Special Coordination Funds for Promoting Science and Technology, Formation of Innovation Center for Fusion of Advanced Technologies.
Publisher Copyright:
© 2017 IEEE.
PY - 2017/7/2
Y1 - 2017/7/2
N2 - This work reports the fabrication and evaluation of Knudsen pump for on-chip vacuum pumping. Three AFM (atomic force microscope) cantilevers are integrated into small chambers with a size of 5 mm × 3 mm × 0.4 mm for the pump's evaluation. Knudsen pump is fabricated using deep RIE (reactive ion etching), wet thermal oxidation and anodic bonding processes. The fabricated device is evaluated, which based on monitoring the quality (Q) factor of the integrated cantilevers. The Q factor of the cantilever is increased from 300 to 1150 in cases without and with a temperature difference approximately 25°C between the top (hot side at 40°C) and bottom (cool side at 15°C) sides of the fabricated device, respectively. The evacuated pressure chamber of around 10 kPa is estimated by the Q factor of the integrated cantilevers.
AB - This work reports the fabrication and evaluation of Knudsen pump for on-chip vacuum pumping. Three AFM (atomic force microscope) cantilevers are integrated into small chambers with a size of 5 mm × 3 mm × 0.4 mm for the pump's evaluation. Knudsen pump is fabricated using deep RIE (reactive ion etching), wet thermal oxidation and anodic bonding processes. The fabricated device is evaluated, which based on monitoring the quality (Q) factor of the integrated cantilevers. The Q factor of the cantilever is increased from 300 to 1150 in cases without and with a temperature difference approximately 25°C between the top (hot side at 40°C) and bottom (cool side at 15°C) sides of the fabricated device, respectively. The evacuated pressure chamber of around 10 kPa is estimated by the Q factor of the integrated cantilevers.
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U2 - 10.1109/PEDS.2017.8289155
DO - 10.1109/PEDS.2017.8289155
M3 - Conference contribution
AN - SCOPUS:85045245044
T3 - Proceedings of the International Conference on Power Electronics and Drive Systems
SP - 550
EP - 552
BT - 2017 IEEE 12th International Conference on Power Electronics and Drive Systems, PEDS 2017
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 12th IEEE International Conference on Power Electronics and Drive Systems, PEDS 2017
Y2 - 12 December 2017 through 15 December 2017
ER -