La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

D. H. Zadeh; H. Oomine; Y. Suzuki; K. Kakushima; P. Ahmet; H. Nohira; Y. Kataoka; A. Nishiyama; N. Sugii; K. Tsutsui; K. Natori; T. Hattori; H. Iwai

doi:10.1016/j.sse.2013.01.013

La₂O₃/In_0.53Ga_0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

D. H. Zadeh, H. Oomine, Y. Suzuki, K. Kakushima, P. Ahmet, H. Nohira, Y. Kataoka, A. Nishiyama, N. Sugii, K. Tsutsui, K. Natori, T. Hattori, H. Iwai

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Effect of W and TiN/W gate metal on the interface quality of La ₂O₃/InGaAs metal-oxide-semiconductor (MOS) interface is investigated. Hard X-ray photoelectron spectroscopy revealed that gate metal greatly affects the oxidation states at La₂O₃/InGaAs interface after post-metallization annealing (PMA). Results demonstrate that TiN/W gate metal can effectively control the reaction at La₂O ₃/InGaAs interface and also suppress the formation of As, Ga, and In oxides. As a result, superior capacitance-voltage (C-V) characteristics with low interface state density (D_it) of 4.6 × 10¹¹ cm ^-2/eV (∼0.1 eV from midgap) and leakage current below 10 ^-5 A/cm² was obtained for TiN/W/La₂O ₃ (10 nm)/InGaAs MOS capacitors. The MOS structure integrity was preserved for annealing temperature up to 620 °C.

Original language	English
Pages (from-to)	29-33
Number of pages	5
Journal	Solid-State Electronics
Volume	82
DOIs	https://doi.org/10.1016/j.sse.2013.01.013
Publication status	Published - 2013
Externally published	Yes

Keywords

Capacitor
High-k/InGaAs
Interface reaction
Interface state density
LaO
Metal gate

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/j.sse.2013.01.013

Cite this

@article{f327920c95e14825a89a56199eb1073b,

title = "La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode",

abstract = "Effect of W and TiN/W gate metal on the interface quality of La 2O3/InGaAs metal-oxide-semiconductor (MOS) interface is investigated. Hard X-ray photoelectron spectroscopy revealed that gate metal greatly affects the oxidation states at La2O3/InGaAs interface after post-metallization annealing (PMA). Results demonstrate that TiN/W gate metal can effectively control the reaction at La2O 3/InGaAs interface and also suppress the formation of As, Ga, and In oxides. As a result, superior capacitance-voltage (C-V) characteristics with low interface state density (Dit) of 4.6 × 1011 cm -2/eV (∼0.1 eV from midgap) and leakage current below 10 -5 A/cm2 was obtained for TiN/W/La2O 3 (10 nm)/InGaAs MOS capacitors. The MOS structure integrity was preserved for annealing temperature up to 620 °C.",

keywords = "Capacitor, High-k/InGaAs, Interface reaction, Interface state density, LaO, Metal gate",

author = "Zadeh, {D. H.} and H. Oomine and Y. Suzuki and K. Kakushima and P. Ahmet and H. Nohira and Y. Kataoka and A. Nishiyama and N. Sugii and K. Tsutsui and K. Natori and T. Hattori and H. Iwai",

note = "Funding Information: This research was granted by the Japan Society for the Promotion of Science (JSPS) through FIRST Program initiated by CSTP.",

year = "2013",

doi = "10.1016/j.sse.2013.01.013",

language = "English",

volume = "82",

pages = "29--33",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Limited",

}

TY - JOUR

T1 - La2O3/In0.53Ga0.47As metal-oxide-semiconductor capacitor with low interface state density using TiN/W gate electrode

AU - Zadeh, D. H.

AU - Oomine, H.

AU - Suzuki, Y.

AU - Kakushima, K.

AU - Ahmet, P.

AU - Nohira, H.

AU - Kataoka, Y.

AU - Nishiyama, A.

AU - Sugii, N.

AU - Tsutsui, K.

AU - Natori, K.

AU - Hattori, T.

AU - Iwai, H.

N1 - Funding Information: This research was granted by the Japan Society for the Promotion of Science (JSPS) through FIRST Program initiated by CSTP.

PY - 2013

Y1 - 2013

N2 - Effect of W and TiN/W gate metal on the interface quality of La 2O3/InGaAs metal-oxide-semiconductor (MOS) interface is investigated. Hard X-ray photoelectron spectroscopy revealed that gate metal greatly affects the oxidation states at La2O3/InGaAs interface after post-metallization annealing (PMA). Results demonstrate that TiN/W gate metal can effectively control the reaction at La2O 3/InGaAs interface and also suppress the formation of As, Ga, and In oxides. As a result, superior capacitance-voltage (C-V) characteristics with low interface state density (Dit) of 4.6 × 1011 cm -2/eV (∼0.1 eV from midgap) and leakage current below 10 -5 A/cm2 was obtained for TiN/W/La2O 3 (10 nm)/InGaAs MOS capacitors. The MOS structure integrity was preserved for annealing temperature up to 620 °C.

AB - Effect of W and TiN/W gate metal on the interface quality of La 2O3/InGaAs metal-oxide-semiconductor (MOS) interface is investigated. Hard X-ray photoelectron spectroscopy revealed that gate metal greatly affects the oxidation states at La2O3/InGaAs interface after post-metallization annealing (PMA). Results demonstrate that TiN/W gate metal can effectively control the reaction at La2O 3/InGaAs interface and also suppress the formation of As, Ga, and In oxides. As a result, superior capacitance-voltage (C-V) characteristics with low interface state density (Dit) of 4.6 × 1011 cm -2/eV (∼0.1 eV from midgap) and leakage current below 10 -5 A/cm2 was obtained for TiN/W/La2O 3 (10 nm)/InGaAs MOS capacitors. The MOS structure integrity was preserved for annealing temperature up to 620 °C.

KW - Capacitor

KW - High-k/InGaAs

KW - Interface reaction

KW - Interface state density

KW - LaO

KW - Metal gate

UR - http://www.scopus.com/inward/record.url?scp=84874701665&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84874701665&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2013.01.013

DO - 10.1016/j.sse.2013.01.013

M3 - Article

AN - SCOPUS:84874701665

SN - 0038-1101

VL - 82

SP - 29

EP - 33

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -