Landau-level hybridization and the quantum hall effect in InAs/(AlSb)/GaSb electron-hole systems

The quantum Hall effect (QHE) and Landau-level (LL) hydbridization are investigated using InAs/(AlSb)/GaSb heterostructures with different electron-hole couplings. It is observed that when electrons and holes are strongly coupled, quantized Hall states appear when net filling factor is an integer and it is not a necessary condition for independent electron and hole filling factors to be integers simultaneously. The quantum Hall sates were found to be replaced by anomalous peaks at high temperature or reduced electron-hole hybridization, when electron filling is a half integer. The results show that in a weakly coupled structure, application of an in-plane field appears to strengthen hybridization.