TY - JOUR
T1 - Landau-Lifshitz-Gilbert micromagnetic simulation on spin transfer torque efficiency of sub-30nm perpendicular magnetic tunnel junctions with etching damage
AU - Ito, Kenchi
AU - Ohuchida, Satoshi
AU - Muraguchi, Masakazu
AU - Endoh, Tetsuo
N1 - Publisher Copyright:
© 2015 The Japan Society of Applied Physics.
PY - 2015/4/1
Y1 - 2015/4/1
N2 - The threshold current density Jc0, effective anisotropy field Heff, and the spin transfer torque (STT) efficiency of magnetic tunnel junctions with perpendicular anisotropy (p-MTJs) with the free layer diameter d from 10 to 30nm was evaluated when etching degraded the saturation magnetization Ms and/or anisotropic energy Ku of the ferromagnetic layers with thickness of 1 to 3 nm around the pillar, using Landau-Lifshitz- Gilbert (LLG) micro-magnetic simulation. The STT efficiency for MTJs with only Ms reduction increased with a decrease in d, which reproduces the experimental trend. Jc0 and Heff for MTJs with only Ku reduction dramatically decreased even when the thickness of the damaged region is only 1 nm. The thickness of the damaged region had a large influence on Jc0 and Heff for MTJs with either Ms or Ku reduction.
AB - The threshold current density Jc0, effective anisotropy field Heff, and the spin transfer torque (STT) efficiency of magnetic tunnel junctions with perpendicular anisotropy (p-MTJs) with the free layer diameter d from 10 to 30nm was evaluated when etching degraded the saturation magnetization Ms and/or anisotropic energy Ku of the ferromagnetic layers with thickness of 1 to 3 nm around the pillar, using Landau-Lifshitz- Gilbert (LLG) micro-magnetic simulation. The STT efficiency for MTJs with only Ms reduction increased with a decrease in d, which reproduces the experimental trend. Jc0 and Heff for MTJs with only Ku reduction dramatically decreased even when the thickness of the damaged region is only 1 nm. The thickness of the damaged region had a large influence on Jc0 and Heff for MTJs with either Ms or Ku reduction.
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U2 - 10.7567/JJAP.54.04DM01
DO - 10.7567/JJAP.54.04DM01
M3 - Article
AN - SCOPUS:84926325161
SN - 0021-4922
VL - 54
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 4
M1 - 04DM01
ER -