TY - JOUR
T1 - Large diode sensitivity of CoFeB/MgO/CoFeB magnetic tunnel junctions
AU - Ishibashi, Shota
AU - Seki, Takeshi
AU - Nozaki, Takayuki
AU - Kubota, Hitoshi
AU - Yakata, Satoshi
AU - Fukushima, Akio
AU - Yuasa, Shinji
AU - Maehara, Hiroki
AU - Tsunekawa, Koji
AU - Djayaprawira, David D.
AU - Suzuki, Yoshishige
PY - 2010/7
Y1 - 2010/7
N2 - We report on rf current-induced excitation of the ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions under a perpendicular magnetic field. By choosing an appropriate external field and using an Fe-rich CoFeB free layer, the effective precession of the free layer could be excited. In a measurement of homodyne detection, a large dc output voltage of 180 μV was obtained when an rf signal power of -25 dBm was applied. The sensitivity of this junction, as an rf rectifier, reaches about 170mV/mW (280mV/mW after impedance matching correction), which is the same order compared with that of a Schottky diode operated at room temperature.
AB - We report on rf current-induced excitation of the ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions under a perpendicular magnetic field. By choosing an appropriate external field and using an Fe-rich CoFeB free layer, the effective precession of the free layer could be excited. In a measurement of homodyne detection, a large dc output voltage of 180 μV was obtained when an rf signal power of -25 dBm was applied. The sensitivity of this junction, as an rf rectifier, reaches about 170mV/mW (280mV/mW after impedance matching correction), which is the same order compared with that of a Schottky diode operated at room temperature.
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U2 - 10.1143/APEX.3.073001
DO - 10.1143/APEX.3.073001
M3 - Article
AN - SCOPUS:77954463949
SN - 1882-0778
VL - 3
JO - Applied Physics Express
JF - Applied Physics Express
IS - 7
M1 - 073001
ER -