Large exchange bias and high blocking temperature of MgO-barrier-MTJs with L12-ordered Mn3Ir

Koujiro Komagaki; Kouji Yamada; Kenji Noma; Hitoshi Kanai; Kazuo Kobayashi; Yuji Uehara; Masakiyo Tsunoda; Migaku Takahashi

doi:10.1109/TMAG.2007.893695

Large exchange bias and high blocking temperature of MgO-barrier-MTJs with L1₂-ordered Mn₃Ir

Koujiro Komagaki, Kouji Yamada, Kenji Noma, Hitoshi Kanai, Kazuo Kobayashi, Yuji Uehara, Masakiyo Tsunoda, Migaku Takahashi

Research Center for Green X-Tech

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

We examined the magnetic properties of CoFeB/MgO/CoFeB based magnetic tunnel junctions (MTJs) with L1₂ (ordered)-Mn₃ Ir or γ (disordered)-Mn₇₅Ir₂B as an antiferromagnetic (AFM) layer. Both of them showed tunnel magnetoresistance (TMR) ratio of about 160 % after 350 °C annealing. The exchange bias field (H_ex) of the MTJs with L1₂ -Mn₃ Ir is significantly larger than that with γ -MnIr. The blocking temperature (T_B) of the MTJ film with L1₂ -Mn₃ Ir is about 50°C higher than that with γ-MnIr. These results prove that L1₂-Mn₃Ir is a great candidate as AFM in MgO-barrier-MTJs and makes them improve in exchange bias properties.

Original language	English
Pages (from-to)	3535-3537
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	43
Issue number	8
DOIs	https://doi.org/10.1109/TMAG.2007.893695
Publication status	Published - 2007 Aug

Keywords

Blocking temperature
Exchange bias
L1(ordered)-Mn Ir
MgO barrier
Tunnel junction
Tunnel magnetoresistance

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10.1109/TMAG.2007.893695

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title = "Large exchange bias and high blocking temperature of MgO-barrier-MTJs with L12-ordered Mn3Ir",

abstract = "We examined the magnetic properties of CoFeB/MgO/CoFeB based magnetic tunnel junctions (MTJs) with L12 (ordered)-Mn3 Ir or γ (disordered)-Mn75Ir2B as an antiferromagnetic (AFM) layer. Both of them showed tunnel magnetoresistance (TMR) ratio of about 160 % after 350 °C annealing. The exchange bias field (Hex) of the MTJs with L12 -Mn3 Ir is significantly larger than that with γ -MnIr. The blocking temperature (TB) of the MTJ film with L12 -Mn3 Ir is about 50°C higher than that with γ-MnIr. These results prove that L12-Mn3Ir is a great candidate as AFM in MgO-barrier-MTJs and makes them improve in exchange bias properties.",

keywords = "Blocking temperature, Exchange bias, L1(ordered)-Mn Ir, MgO barrier, Tunnel junction, Tunnel magnetoresistance",

author = "Koujiro Komagaki and Kouji Yamada and Kenji Noma and Hitoshi Kanai and Kazuo Kobayashi and Yuji Uehara and Masakiyo Tsunoda and Migaku Takahashi",

year = "2007",

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doi = "10.1109/TMAG.2007.893695",

language = "English",

volume = "43",

pages = "3535--3537",

journal = "IEEE Transactions on Magnetics",

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T1 - Large exchange bias and high blocking temperature of MgO-barrier-MTJs with L12-ordered Mn3Ir

AU - Komagaki, Koujiro

AU - Yamada, Kouji

AU - Noma, Kenji

AU - Kanai, Hitoshi

AU - Kobayashi, Kazuo

AU - Uehara, Yuji

AU - Tsunoda, Masakiyo

AU - Takahashi, Migaku

PY - 2007/8

Y1 - 2007/8

N2 - We examined the magnetic properties of CoFeB/MgO/CoFeB based magnetic tunnel junctions (MTJs) with L12 (ordered)-Mn3 Ir or γ (disordered)-Mn75Ir2B as an antiferromagnetic (AFM) layer. Both of them showed tunnel magnetoresistance (TMR) ratio of about 160 % after 350 °C annealing. The exchange bias field (Hex) of the MTJs with L12 -Mn3 Ir is significantly larger than that with γ -MnIr. The blocking temperature (TB) of the MTJ film with L12 -Mn3 Ir is about 50°C higher than that with γ-MnIr. These results prove that L12-Mn3Ir is a great candidate as AFM in MgO-barrier-MTJs and makes them improve in exchange bias properties.

AB - We examined the magnetic properties of CoFeB/MgO/CoFeB based magnetic tunnel junctions (MTJs) with L12 (ordered)-Mn3 Ir or γ (disordered)-Mn75Ir2B as an antiferromagnetic (AFM) layer. Both of them showed tunnel magnetoresistance (TMR) ratio of about 160 % after 350 °C annealing. The exchange bias field (Hex) of the MTJs with L12 -Mn3 Ir is significantly larger than that with γ -MnIr. The blocking temperature (TB) of the MTJ film with L12 -Mn3 Ir is about 50°C higher than that with γ-MnIr. These results prove that L12-Mn3Ir is a great candidate as AFM in MgO-barrier-MTJs and makes them improve in exchange bias properties.

KW - Blocking temperature

KW - Exchange bias

KW - L1(ordered)-Mn Ir

KW - MgO barrier

KW - Tunnel junction

KW - Tunnel magnetoresistance

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DO - 10.1109/TMAG.2007.893695

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JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 8

ER -

Large exchange bias and high blocking temperature of MgO-barrier-MTJs with L1₂-ordered Mn₃Ir

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Keywords

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