Large magnetoresistance effect in epitaxial Co2Fe 0.4Mn0.6Si/Ag/Co2Fe0.4Mn 0.6Si devices

Jo Sato; Mikihiko Oogane; Hiroshi Naganuma; Yasuo Ando

doi:10.1143/APEX.4.113005

Large magnetoresistance effect in epitaxial Co₂Fe _0.4Mn_0.6Si/Ag/Co₂Fe_0.4Mn _0.6Si devices

Jo Sato, Mikihiko Oogane, Hiroshi Naganuma, Yasuo Ando

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

109 Citations (Scopus)

Abstract

Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with a Co₂Fe_0.4Mn_0.6Si/Ag/ Co₂Fe_0.4Mn_0.6Si structure were fabricated. The bottom and top Co₂Fe_0.4Mn_0.6Si layers had good crystallinity and an L2₁-ordered structure. In addition, we found from scanning transmission electron microscopy (STEM) measurements that both Co₂Fe_0.4Mn_0.6Si/Ag and Ag/Co₂Fe _0.4Mn_0.6Si interfaces were very flat and sharp. The magnetoresistance (MR) ratio at room temperature was 74.8%, the largest to date for CPP-GMR devices. CPPGMR devices with Co₂Fe_0.4Mn _0.6Si electrodes would be very useful for the next generation of hard disk drive (HDD) read heads.

Original language	English
Article number	113005
Journal	Applied Physics Express
Volume	4
Issue number	11
DOIs	https://doi.org/10.1143/APEX.4.113005
Publication status	Published - 2011 Nov 1

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{eb81b7c8944f401e83c0eb578d97c383,

title = "Large magnetoresistance effect in epitaxial Co2Fe 0.4Mn0.6Si/Ag/Co2Fe0.4Mn 0.6Si devices",

abstract = "Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with a Co2Fe0.4Mn0.6Si/Ag/ Co2Fe0.4Mn0.6Si structure were fabricated. The bottom and top Co2Fe0.4Mn0.6Si layers had good crystallinity and an L21-ordered structure. In addition, we found from scanning transmission electron microscopy (STEM) measurements that both Co2Fe0.4Mn0.6Si/Ag and Ag/Co2Fe 0.4Mn0.6Si interfaces were very flat and sharp. The magnetoresistance (MR) ratio at room temperature was 74.8%, the largest to date for CPP-GMR devices. CPPGMR devices with Co2Fe0.4Mn 0.6Si electrodes would be very useful for the next generation of hard disk drive (HDD) read heads.",

author = "Jo Sato and Mikihiko Oogane and Hiroshi Naganuma and Yasuo Ando",

year = "2011",

month = nov,

day = "1",

doi = "10.1143/APEX.4.113005",

language = "English",

volume = "4",

journal = "Applied Physics Express",

issn = "1882-0778",

publisher = "Japan Society of Applied Physics",

number = "11",

}

TY - JOUR

T1 - Large magnetoresistance effect in epitaxial Co2Fe 0.4Mn0.6Si/Ag/Co2Fe0.4Mn 0.6Si devices

AU - Sato, Jo

AU - Oogane, Mikihiko

AU - Naganuma, Hiroshi

AU - Ando, Yasuo

PY - 2011/11/1

Y1 - 2011/11/1

N2 - Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with a Co2Fe0.4Mn0.6Si/Ag/ Co2Fe0.4Mn0.6Si structure were fabricated. The bottom and top Co2Fe0.4Mn0.6Si layers had good crystallinity and an L21-ordered structure. In addition, we found from scanning transmission electron microscopy (STEM) measurements that both Co2Fe0.4Mn0.6Si/Ag and Ag/Co2Fe 0.4Mn0.6Si interfaces were very flat and sharp. The magnetoresistance (MR) ratio at room temperature was 74.8%, the largest to date for CPP-GMR devices. CPPGMR devices with Co2Fe0.4Mn 0.6Si electrodes would be very useful for the next generation of hard disk drive (HDD) read heads.

AB - Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with a Co2Fe0.4Mn0.6Si/Ag/ Co2Fe0.4Mn0.6Si structure were fabricated. The bottom and top Co2Fe0.4Mn0.6Si layers had good crystallinity and an L21-ordered structure. In addition, we found from scanning transmission electron microscopy (STEM) measurements that both Co2Fe0.4Mn0.6Si/Ag and Ag/Co2Fe 0.4Mn0.6Si interfaces were very flat and sharp. The magnetoresistance (MR) ratio at room temperature was 74.8%, the largest to date for CPP-GMR devices. CPPGMR devices with Co2Fe0.4Mn 0.6Si electrodes would be very useful for the next generation of hard disk drive (HDD) read heads.

UR - http://www.scopus.com/inward/record.url?scp=81055154939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=81055154939&partnerID=8YFLogxK

U2 - 10.1143/APEX.4.113005

DO - 10.1143/APEX.4.113005

M3 - Article

AN - SCOPUS:81055154939

SN - 1882-0778

VL - 4

JO - Applied Physics Express

JF - Applied Physics Express

IS - 11

M1 - 113005

ER -

Large magnetoresistance effect in epitaxial Co₂Fe _0.4Mn_0.6Si/Ag/Co₂Fe_0.4Mn _0.6Si devices

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