Large magnetoresistance effect in epitaxial Co2Fe 0.4Mn0.6Si/Ag/Co2Fe0.4Mn 0.6Si devices

Research output: Contribution to journalArticlepeer-review

109 Citations (Scopus)


Fully epitaxial current-perpendicular-to-plane giant magnetoresistance (CPP-GMR) devices with a Co2Fe0.4Mn0.6Si/Ag/ Co2Fe0.4Mn0.6Si structure were fabricated. The bottom and top Co2Fe0.4Mn0.6Si layers had good crystallinity and an L21-ordered structure. In addition, we found from scanning transmission electron microscopy (STEM) measurements that both Co2Fe0.4Mn0.6Si/Ag and Ag/Co2Fe 0.4Mn0.6Si interfaces were very flat and sharp. The magnetoresistance (MR) ratio at room temperature was 74.8%, the largest to date for CPP-GMR devices. CPPGMR devices with Co2Fe0.4Mn 0.6Si electrodes would be very useful for the next generation of hard disk drive (HDD) read heads.

Original languageEnglish
Article number113005
JournalApplied Physics Express
Issue number11
Publication statusPublished - 2011 Nov 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


Dive into the research topics of 'Large magnetoresistance effect in epitaxial Co2Fe 0.4Mn0.6Si/Ag/Co2Fe0.4Mn 0.6Si devices'. Together they form a unique fingerprint.

Cite this