Large magnetoresistance in magnetic tunnel junctions using Co-Mn-Al full heusler alloy

Hitoshi Kubota; Jun Nakata; Mikihiko Oogane; Yasuo Ando; Akimasa Sakuma; Terunobu Miyazaki

doi:10.1143/JJAP.43.L984

Large magnetoresistance in magnetic tunnel junctions using Co-Mn-Al full heusler alloy

Hitoshi Kubota, Jun Nakata, Mikihiko Oogane, Yasuo Ando, Akimasa Sakuma, Terunobu Miyazaki

ENG - Applied Physics

Research output: Contribution to journal › Article › peer-review

81 Citations (Scopus)

Abstract

Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/Co- Fe/Ir-Mn were fabricated using a UHV magnetron-sputtering machine. Co-Mn-Al films showed B2 structure, which involves partial disorder between Mn and Al sites. Tunnel magnetoresistance ratios at room temperature were 27% and 40% before and after annealing at 250°C, respectively. Those values are much higher than the ones obtained in previous experiments using half Heusler alloys.

Original language	English
Pages (from-to)	L984-L986
Journal	Japanese Journal of Applied Physics
Volume	43
Issue number	7 B
DOIs	https://doi.org/10.1143/JJAP.43.L984
Publication status	Published - 2004 Jul 15

Keywords

Heusler alloy
Magnetic random access memory
Spin polarization
Tunnel magnetoresistance

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10.1143/JJAP.43.L984

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abstract = "Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/Co- Fe/Ir-Mn were fabricated using a UHV magnetron-sputtering machine. Co-Mn-Al films showed B2 structure, which involves partial disorder between Mn and Al sites. Tunnel magnetoresistance ratios at room temperature were 27% and 40% before and after annealing at 250°C, respectively. Those values are much higher than the ones obtained in previous experiments using half Heusler alloys.",

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T1 - Large magnetoresistance in magnetic tunnel junctions using Co-Mn-Al full heusler alloy

AU - Kubota, Hitoshi

AU - Nakata, Jun

AU - Oogane, Mikihiko

AU - Ando, Yasuo

AU - Sakuma, Akimasa

AU - Miyazaki, Terunobu

PY - 2004/7/15

Y1 - 2004/7/15

N2 - Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/Co- Fe/Ir-Mn were fabricated using a UHV magnetron-sputtering machine. Co-Mn-Al films showed B2 structure, which involves partial disorder between Mn and Al sites. Tunnel magnetoresistance ratios at room temperature were 27% and 40% before and after annealing at 250°C, respectively. Those values are much higher than the ones obtained in previous experiments using half Heusler alloys.

AB - Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/Co- Fe/Ir-Mn were fabricated using a UHV magnetron-sputtering machine. Co-Mn-Al films showed B2 structure, which involves partial disorder between Mn and Al sites. Tunnel magnetoresistance ratios at room temperature were 27% and 40% before and after annealing at 250°C, respectively. Those values are much higher than the ones obtained in previous experiments using half Heusler alloys.

KW - Heusler alloy

KW - Magnetic random access memory

KW - Spin polarization

KW - Tunnel magnetoresistance

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7 B

ER -

Large magnetoresistance in magnetic tunnel junctions using Co-Mn-Al full heusler alloy

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Keywords

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