Magnetic tunnel junctions with a stacking structure of Cr/Co-Mn-Al/Al-O/Co- Fe/Ir-Mn were fabricated using a UHV magnetron-sputtering machine. Co-Mn-Al films showed B2 structure, which involves partial disorder between Mn and Al sites. Tunnel magnetoresistance ratios at room temperature were 27% and 40% before and after annealing at 250°C, respectively. Those values are much higher than the ones obtained in previous experiments using half Heusler alloys.
- Heusler alloy
- Magnetic random access memory
- Spin polarization
- Tunnel magnetoresistance