TY - JOUR
T1 - Large non-reciprocal charge transport mediated by quantum anomalous Hall edge states
AU - Yasuda, Kenji
AU - Morimoto, Takahiro
AU - Yoshimi, Ryutaro
AU - Mogi, Masataka
AU - Tsukazaki, Atsushi
AU - Kawamura, Minoru
AU - Takahashi, Kei S.
AU - Kawasaki, Masashi
AU - Nagaosa, Naoto
AU - Tokura, Yoshinori
N1 - Funding Information:
This research was supported by a JSPS/MEXT Grant-in-Aid for Scientific Research (no. 15H05853, no. 15H05867, no. 16J03476, no. 17H04846, no. 18H03676, no. 18H04229 and no. 18H01155), JST CREST (no. JPMJCR16F1, no. JPMJCR1874 and no. JPMJCR19T3) and JST PRESTO (no. JPMJPR19L9).
Publisher Copyright:
© 2020, The Author(s), under exclusive licence to Springer Nature Limited.
PY - 2020/10/1
Y1 - 2020/10/1
N2 - The topological nature of the quantum anomalous Hall effect (QAHE) causes a dissipationless chiral edge current at the sample boundary1,2. Of fundamental interest is whether the chirality of the band structure manifests itself in charge transport properties. Here we report the observation of large non-reciprocal charge transport3 in a magnetic topological insulator, Cr-doped (Bi,Sb)2Te3. When the surface massive Dirac band is slightly carrier doped by a gate voltage, the edge state starts to dissipate and exhibits a current-direction-dependent resistance with a directional difference as large as 26%. The polarity of this diode effect depends on the magnetization direction as well as on the carrier type, electrons or holes. The correlation between the non-reciprocal resistance and the Hall resistance indicates that the non-reciprocity originates from the interplay between the chiral edge state and the Dirac surface state.
AB - The topological nature of the quantum anomalous Hall effect (QAHE) causes a dissipationless chiral edge current at the sample boundary1,2. Of fundamental interest is whether the chirality of the band structure manifests itself in charge transport properties. Here we report the observation of large non-reciprocal charge transport3 in a magnetic topological insulator, Cr-doped (Bi,Sb)2Te3. When the surface massive Dirac band is slightly carrier doped by a gate voltage, the edge state starts to dissipate and exhibits a current-direction-dependent resistance with a directional difference as large as 26%. The polarity of this diode effect depends on the magnetization direction as well as on the carrier type, electrons or holes. The correlation between the non-reciprocal resistance and the Hall resistance indicates that the non-reciprocity originates from the interplay between the chiral edge state and the Dirac surface state.
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U2 - 10.1038/s41565-020-0733-2
DO - 10.1038/s41565-020-0733-2
M3 - Article
C2 - 32661369
AN - SCOPUS:85087826408
SN - 1748-3387
VL - 15
SP - 831
EP - 835
JO - Nature Nanotechnology
JF - Nature Nanotechnology
IS - 10
ER -