TY - JOUR
T1 - Large nonvolatile control of interfacial magnetic anisotropy in CoPt by a ferroelectric ZnO-based tunneling barrier
AU - Al-Mahdawi, Muftah
AU - Belmoubarik, Mohamed
AU - Obata, Masao
AU - Yoshikawa, Daiki
AU - Sato, Hideyuki
AU - Nozaki, Tomohiro
AU - Oda, Tatsuki
AU - Sahashi, Masashi
N1 - Funding Information:
The authors are thankful to Haruyuki Endo of Iwate Industrial Research Institute, Japan for helping in the samples preparation. This work was partially supported by the JSPS Grant No. JP13J05806, the JSPS KAKENHI Grant No. JP18K04923, Kanazawa University SAKIGAKE Project, the Computational Materials Science Initiative, Japan, the Advanced Institute for Computational Science and Information Technology Center of Nagoya University through the High Performance Computing Infrastructure (HPCI) System Research Project under Projects hp17168 and hp180206, and the ImPACT Program of the Council for Science, Technology and Innovation (Cabinet Office, Government of Japan). The first-principles calculations were performed using the facilities of the Supercomputer Center, Institute for Solid State Physics, University of Tokyo, Japan.
Funding Information:
The authors are thankful to Haruyuki Endo of Iwate Industrial Research Institute, Japan for helping in the samples preparation. This work was partially supported by the JSPS Grant No. JP13J05806, the JSPS KAKENHI Grant No. JP18K04923, Kanazawa University SAKIGAKE Project, the Computational Materials Science Initiative, Japan, the Advanced Institute for Computational Science and Information Technology Center of Nagoya University through the High Performance Computing Infrastructure (HPCI) System Research Project under Projects hp17168 and hp180206, and the ImPACT Program of the Council for Science, Technology and Innovation (Cabinet Office, Government of Japan). The first-principles calculations were performed using the facilities of the Supercomputer Center, Institute for Solid State Physics, University of Tokyo, Japan.
Publisher Copyright:
© 2019 American Physical Society. ©2019 American Physical Society.
PY - 2019/8/19
Y1 - 2019/8/19
N2 - The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolatile control of magnetic anisotropy in the ferromagnetic/ferroelectric CoPt/ZnO interface. Using the switched electric polarization of ZnO, the density-of-states and magnetic anisotropy at the CoPt surface show a large change. Due to a strong Co/Pt orbitals hybridization and a large spin-orbit coupling, a large control of magnetic anisotropy was found. We experimentally measured the change of effective anisotropy by tunneling resistance measurements in CoPt/Mg-doped ZnO/Co junctions. Additionally, we corroborate the origin of the control of magnetic anisotropy by observations on tunneling anisotropic magnetoresistance.
AB - The electric control of magnetic anisotropy has important applications for nonvolatile memory and information processing. By first-principles calculations, we show a large nonvolatile control of magnetic anisotropy in the ferromagnetic/ferroelectric CoPt/ZnO interface. Using the switched electric polarization of ZnO, the density-of-states and magnetic anisotropy at the CoPt surface show a large change. Due to a strong Co/Pt orbitals hybridization and a large spin-orbit coupling, a large control of magnetic anisotropy was found. We experimentally measured the change of effective anisotropy by tunneling resistance measurements in CoPt/Mg-doped ZnO/Co junctions. Additionally, we corroborate the origin of the control of magnetic anisotropy by observations on tunneling anisotropic magnetoresistance.
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U2 - 10.1103/PhysRevB.100.054423
DO - 10.1103/PhysRevB.100.054423
M3 - Article
AN - SCOPUS:85072038179
SN - 2469-9950
VL - 100
JO - Physical Review B
JF - Physical Review B
IS - 5
M1 - 054423
ER -