TY - JOUR
T1 - Large single-domain growth of monolayer WS2 by rapid-cooling chemical vapor deposition
AU - Li, Chao
AU - Yamaguchi, Yoshiki
AU - Kaneko, Toshiro
AU - Kato, Toshiaki
N1 - Publisher Copyright:
© 2017 The Japan Society of Applied Physics.
PY - 2017/7
Y1 - 2017/7
N2 - A novel method for the synthesis of large monolayer and single-crystal tungsten disulfide (WS2) has been developed by introducing a rapid-cooling stage to the conventional chemical vapor deposition (CVD). The maximum size of single-crystal WS2 can be increased up to 320μm by adjusting the growth parameters during the rapid-cooling CVD. This is one of the largest sizes of single-crystal transition metal dichalcogenides directly grown on an insulating substrate. A theoretical model reveals that the increase in WS2 size can be explained by the enhanced nucleation probability and the growth velocity, caused by the additional precursors supplied during the rapid cooling.
AB - A novel method for the synthesis of large monolayer and single-crystal tungsten disulfide (WS2) has been developed by introducing a rapid-cooling stage to the conventional chemical vapor deposition (CVD). The maximum size of single-crystal WS2 can be increased up to 320μm by adjusting the growth parameters during the rapid-cooling CVD. This is one of the largest sizes of single-crystal transition metal dichalcogenides directly grown on an insulating substrate. A theoretical model reveals that the increase in WS2 size can be explained by the enhanced nucleation probability and the growth velocity, caused by the additional precursors supplied during the rapid cooling.
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U2 - 10.7567/APEX.10.075201
DO - 10.7567/APEX.10.075201
M3 - Article
AN - SCOPUS:85021827503
SN - 1882-0778
VL - 10
JO - Applied Physics Express
JF - Applied Physics Express
IS - 7
M1 - 075201
ER -