TY - GEN
T1 - Laser thermoreflectance measurement for evaluating heat capacity and interface heat resistance of low-k films
AU - Ye, Jiping
AU - Okamura, Takeo
AU - Sato, Shigeo
PY - 2007/12/1
Y1 - 2007/12/1
N2 - A novel technique that combines laser thermoreflectance measurement with the 3-omega method is proposed for evaluating the heat capacity of low-k films and the heat resistance at the interface between the low-k film and Si substrate. It was demonstrated that the heat capacity of thin films and the heat resistance at the interface can be determined by obtaining the heat effusivity of the film from laser thermoreflectance measurements, the total heat resistance obtained with the 3-omega method, and the film density and thickness found from x-ray reflectivity measurements, the heat capacity of SiOC film was determined to be Cp/(SiOC)=1.1 kJ/kgK with interface heat resistance R int(SiOC)= -2.37×10-8 m2W, while the heat capacity of Th-ox films was determined to be Cp(Th-ox) =0-61 kJ/kgK with Rint(Th-ox)= +1.74×10-8 m2k/W. A DSC heat capacity measurement confirmed the reliability of the evaluated C p data XRR and TEM examinations revealed that the negative interface heat resistance exhibited by the SiOC films is deeply relative to a high density layer at the interface between the film and Si substrate; and the positive interface heat resistance displayed by the Th-ox films stemmed from atomic defects at the interface between the film and Si substrat. The measured negative interface heat resistance is an apparent value, which does not mean a real negative interface heat resistance physically existing at the interface, but the easiness for heat to flow from the film to the substrate.
AB - A novel technique that combines laser thermoreflectance measurement with the 3-omega method is proposed for evaluating the heat capacity of low-k films and the heat resistance at the interface between the low-k film and Si substrate. It was demonstrated that the heat capacity of thin films and the heat resistance at the interface can be determined by obtaining the heat effusivity of the film from laser thermoreflectance measurements, the total heat resistance obtained with the 3-omega method, and the film density and thickness found from x-ray reflectivity measurements, the heat capacity of SiOC film was determined to be Cp/(SiOC)=1.1 kJ/kgK with interface heat resistance R int(SiOC)= -2.37×10-8 m2W, while the heat capacity of Th-ox films was determined to be Cp(Th-ox) =0-61 kJ/kgK with Rint(Th-ox)= +1.74×10-8 m2k/W. A DSC heat capacity measurement confirmed the reliability of the evaluated C p data XRR and TEM examinations revealed that the negative interface heat resistance exhibited by the SiOC films is deeply relative to a high density layer at the interface between the film and Si substrate; and the positive interface heat resistance displayed by the Th-ox films stemmed from atomic defects at the interface between the film and Si substrat. The measured negative interface heat resistance is an apparent value, which does not mean a real negative interface heat resistance physically existing at the interface, but the easiness for heat to flow from the film to the substrate.
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M3 - Conference contribution
AN - SCOPUS:41549137978
SN - 9781558999503
T3 - Materials Research Society Symposium Proceedings
SP - 73
EP - 77
BT - Materials, Processes, Integration and Reliability in Advanced Interconnects for Micro- and Nanoelectronics
T2 - 2007 MRS Spring Meeting
Y2 - 10 April 2007 through 12 April 2007
ER -