Lateral GaAs photodetector fabricated by ga focused-ion-beam implantation

Hidehiko Iguchi; Yoshiro Hirayama; Hiroshi Okamoto

doi:10.1143/JJAP.25.L560

Lateral GaAs photodetector fabricated by ga focused-ion-beam implantation

Hidehiko Iguchi, Yoshiro Hirayama, Hiroshi Okamoto

Center for Science and Innovation in Spintronics (CSIS)

Nippon Telegraph & Telephone

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A photodetector with lateral GaAs n⁺-π-n⁺ structure is studied. This structure is fabricated by Ga ion implantation into n⁺-GaAs epilayer on a semi-insulating GaAs substrate using focused-ion-beam (FIB) technology. This photodetector behaves as a phototransistor in low-bias region and avalanche multiplication appears beyond a breakdown voltage. Multiplication gain of more than 50 and impulse response of less than 200 ps were obtained. These characteristics make this device suitable for application in monolithic optoelectronic circuits.

Original language	English
Pages (from-to)	L560-L563
Journal	Japanese Journal of Applied Physics
Volume	25
Issue number	7
DOIs	https://doi.org/10.1143/JJAP.25.L560
Publication status	Published - 1986 Jul

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abstract = "A photodetector with lateral GaAs n+-π-n+ structure is studied. This structure is fabricated by Ga ion implantation into n+-GaAs epilayer on a semi-insulating GaAs substrate using focused-ion-beam (FIB) technology. This photodetector behaves as a phototransistor in low-bias region and avalanche multiplication appears beyond a breakdown voltage. Multiplication gain of more than 50 and impulse response of less than 200 ps were obtained. These characteristics make this device suitable for application in monolithic optoelectronic circuits.",

author = "Hidehiko Iguchi and Yoshiro Hirayama and Hiroshi Okamoto",

year = "1986",

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AU - Iguchi, Hidehiko

AU - Hirayama, Yoshiro

AU - Okamoto, Hiroshi

PY - 1986/7

Y1 - 1986/7

N2 - A photodetector with lateral GaAs n+-π-n+ structure is studied. This structure is fabricated by Ga ion implantation into n+-GaAs epilayer on a semi-insulating GaAs substrate using focused-ion-beam (FIB) technology. This photodetector behaves as a phototransistor in low-bias region and avalanche multiplication appears beyond a breakdown voltage. Multiplication gain of more than 50 and impulse response of less than 200 ps were obtained. These characteristics make this device suitable for application in monolithic optoelectronic circuits.

AB - A photodetector with lateral GaAs n+-π-n+ structure is studied. This structure is fabricated by Ga ion implantation into n+-GaAs epilayer on a semi-insulating GaAs substrate using focused-ion-beam (FIB) technology. This photodetector behaves as a phototransistor in low-bias region and avalanche multiplication appears beyond a breakdown voltage. Multiplication gain of more than 50 and impulse response of less than 200 ps were obtained. These characteristics make this device suitable for application in monolithic optoelectronic circuits.

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SP - L560-L563

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 7

ER -

Lateral GaAs photodetector fabricated by ga focused-ion-beam implantation

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