Lateral GaAs photodetector fabricated by ga focused-ion-beam implantation

Hidehiko Iguchi, Yoshiro Hirayama, Hiroshi Okamoto

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


A photodetector with lateral GaAs n+-π-n+ structure is studied. This structure is fabricated by Ga ion implantation into n+-GaAs epilayer on a semi-insulating GaAs substrate using focused-ion-beam (FIB) technology. This photodetector behaves as a phototransistor in low-bias region and avalanche multiplication appears beyond a breakdown voltage. Multiplication gain of more than 50 and impulse response of less than 200 ps were obtained. These characteristics make this device suitable for application in monolithic optoelectronic circuits.

Original languageEnglish
Pages (from-to)L560-L563
JournalJapanese Journal of Applied Physics
Issue number7
Publication statusPublished - 1986 Jul


Dive into the research topics of 'Lateral GaAs photodetector fabricated by ga focused-ion-beam implantation'. Together they form a unique fingerprint.

Cite this