Lateral patterning of GaN polarity using wet etching process

Yujiro Fukuhara, Ryuji Katayama, Kentaro Onabe

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)


A lateral patterning of GaN polarity using wet etching process is demonstrated. The lattice polarity of a GaN film is examined by RHEED, KOH etching, micro-Raman scattering and Kelvin force microscopy investigations. We have confirmed the high crystal quality of the lattice-polarity inverted GaN heterostructure fabricated by the all-wet process. The difference between the surface potentials of the N-polar and Ga-polar GaN regions originates from the inversion of the direction of the spontaneous polarization as deduced from the fact that the piezoelectric polarization is negligible compared with the spontaneous polarization. The KOH etching result is consistent with the above mentioned result. This work is the first and direct demonstration for the successful fabrication of the polarity-inverted GaN heterostructure by an all-wet process. We suggest the feasibility of the convenient all wet process for the fabrication of the quasi-phase-matched waveguides and photonic crystals for efficient nonlinear frequency conversion

Original languageEnglish
Pages (from-to)1922-1924
Number of pages3
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number7-8
Publication statusPublished - 2010
Event8th International Conference on Nitride Semiconductors, ICNS-8 - Jeju, Korea, Republic of
Duration: 2009 Oct 182009 Oct 23


  • Etching
  • GaN
  • MBE
  • Patterning
  • Raman spectra
  • Strain-induced piezoelectric fields

ASJC Scopus subject areas

  • Condensed Matter Physics


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