Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants

N. Chinone; K. Yamasue; Y. Hiranaga; K. Honda; Y. Cho

doi:10.1063/1.4766349

Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants

N. Chinone, K. Yamasue, Y. Hiranaga, K. Honda, Y. Cho

Tohoku University

Research output: Contribution to journal › Article › peer-review

13 Citations (Scopus)

Abstract

Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO₃ (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET.

Original language	English
Article number	213112
Journal	Applied Physics Letters
Volume	101
Issue number	21
DOIs	https://doi.org/10.1063/1.4766349
Publication status	Published - 2012 Nov 19

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title = "Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants",

abstract = "Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO3 (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET.",

author = "N. Chinone and K. Yamasue and Y. Hiranaga and K. Honda and Y. Cho",

note = "Funding Information: We would like to acknowledge Masao Uno of Murata Manufacturing Co., Ltd., and Toshihiko Iwai of the Research Institute of Electric Communication, Tohoku University, for supporting the development of the high-sensitivity SNDM probe. This work was supported in part by a Grant-in-Aid for Scientific Research S (23226008) from the Japan Society for the Promotion of Science.",

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T1 - Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants

AU - Chinone, N.

AU - Yamasue, K.

AU - Hiranaga, Y.

AU - Honda, K.

AU - Cho, Y.

N1 - Funding Information: We would like to acknowledge Masao Uno of Murata Manufacturing Co., Ltd., and Toshihiko Iwai of the Research Institute of Electric Communication, Tohoku University, for supporting the development of the high-sensitivity SNDM probe. This work was supported in part by a Grant-in-Aid for Scientific Research S (23226008) from the Japan Society for the Promotion of Science.

PY - 2012/11/19

Y1 - 2012/11/19

N2 - Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO3 (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET.

AB - Scanning nonlinear dielectric microscopy (SNDM) can be used to visualize polarization distributions in ferroelectric materials and dopant profiles in semiconductor devices. Without using a special sharp tip, we achieved an improved lateral resolution in SNDM through the measurement of super-higher-order nonlinearity up to the fourth order. We observed a multidomain single crystal congruent LiTaO3 (CLT) sample, and a cross section of a metal-oxide-semiconductor (MOS) field-effect-transistor (FET). The imaged domain boundaries of the CLT were narrower in the super-higher-order images than in the conventional image. Compared to the conventional method, the super-higher-order method resolved the more detailed structure of the MOSFET.

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Lateral resolution improvement in scanning nonlinear dielectric microscopy by measuring super-higher-order nonlinear dielectric constants

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