Latest developments of the spin-valve transistor

J. C. Lodder; D. J. Monsma; R. Mollema; T. Shimatsu; R. Vlutters

doi:10.1016/S0304-8853(97)00594-5

Latest developments of the spin-valve transistor

J. C. Lodder, D. J. Monsma, R. Mollema, T. Shimatsu, R. Vlutters

FRIS - Advanced Interdisciplinary Research Division

University of Twente

Research output: Contribution to journal › Article › peer-review

Abstract

A Co/Cu multilayer serves as a base region of an n-Si metal-base structure in spin-valve transistor (SVT). A 215% change in collector current is found in 40 kA/m at 77 K with typical characteristics of a spin-valve effect. The device is biased to inject hot electrons from one Si layer through the multilayer. The sputterbond technology and lithographic process are developed to reduce the dimensions of the device. The technology and the realization of an SVT also establish the feasibility of combining Si technology and spin electronics. The combination of nanomagnetism and nanoelectronics makes it possible to realize new devices and memory functions.

Original language	English
Pages (from-to)	159
Number of pages	1
Journal	Journal of Magnetism and Magnetic Materials
Volume	175
Issue number	1-2
DOIs	https://doi.org/10.1016/S0304-8853(97)00594-5
Publication status	Published - 1997

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abstract = "A Co/Cu multilayer serves as a base region of an n-Si metal-base structure in spin-valve transistor (SVT). A 215% change in collector current is found in 40 kA/m at 77 K with typical characteristics of a spin-valve effect. The device is biased to inject hot electrons from one Si layer through the multilayer. The sputterbond technology and lithographic process are developed to reduce the dimensions of the device. The technology and the realization of an SVT also establish the feasibility of combining Si technology and spin electronics. The combination of nanomagnetism and nanoelectronics makes it possible to realize new devices and memory functions.",

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AU - Vlutters, R.

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AB - A Co/Cu multilayer serves as a base region of an n-Si metal-base structure in spin-valve transistor (SVT). A 215% change in collector current is found in 40 kA/m at 77 K with typical characteristics of a spin-valve effect. The device is biased to inject hot electrons from one Si layer through the multilayer. The sputterbond technology and lithographic process are developed to reduce the dimensions of the device. The technology and the realization of an SVT also establish the feasibility of combining Si technology and spin electronics. The combination of nanomagnetism and nanoelectronics makes it possible to realize new devices and memory functions.

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Latest developments of the spin-valve transistor

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