TY - GEN
T1 - Latest power devices for photovoltaic inverters
AU - Fujihira, T.
AU - Otsuki, A.
AU - Takahashi, Y.
AU - Ide, T.
AU - Kawano, M.
AU - Eguchi, N.
PY - 2012
Y1 - 2012
N2 - Excellent electrical properties of latest power devices for improving the efficiency of PV inverters are presented. Power modules using SiC-MOSFET and -SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99.0%. Silicon IGBT modules using RB-IGBT have enabled to mass-produce PV inverters with peak efficiency of 98.4%. Silicon SJ-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point.
AB - Excellent electrical properties of latest power devices for improving the efficiency of PV inverters are presented. Power modules using SiC-MOSFET and -SBD exhibit the possibility to realize PV inverters with peak efficiency beyond 99.0%. Silicon IGBT modules using RB-IGBT have enabled to mass-produce PV inverters with peak efficiency of 98.4%. Silicon SJ-MOSFET and discrete IGBT have enabled to improve the efficiency of small power PV inverters by 0.5 point.
UR - http://www.scopus.com/inward/record.url?scp=84864857220&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84864857220&partnerID=8YFLogxK
U2 - 10.1109/ISIE.2012.6237363
DO - 10.1109/ISIE.2012.6237363
M3 - Conference contribution
AN - SCOPUS:84864857220
SN - 9781467301589
T3 - IEEE International Symposium on Industrial Electronics
SP - 1791
EP - 1794
BT - Proceedings - 2012 IEEE International Symposium on Industrial Electronics, ISIE 2012
T2 - 21st IEEE International Symposium on Industrial Electronics, ISIE 2012
Y2 - 28 May 2012 through 31 May 2012
ER -
