Lattice disorder induced by nitrogen-ion implantation in single crystal Mn-Zn ferrite

K. Takahiro; S. Nagata; M. Kishimoto; S. Yamaguchi; S. Mamiya; K. Gotoh

doi:10.1016/S0257-8972(99)00327-8

Lattice disorder induced by nitrogen-ion implantation in single crystal Mn-Zn ferrite

K. Takahiro, S. Nagata, M. Kishimoto, S. Yamaguchi, S. Mamiya, K. Gotoh

Materials Design Division

Research output: Contribution to journal › Article › peer-review

Abstract

Single crystal Mn-Zn ferrite was implanted with nitrogen molecule ions (N⁺₂) at 100keV to investigate the annealing behavior of the implantation-induced damage at temperatures of 400-900°C. The lattice disorder was investigated by Rutherford backscattering combined with ion channeling. The annealing behavior of the lattice disorder revealed that two kinds of lattice distortion exist in the implanted crystal; the distortion that exists at a depth greater than the projected range was recovered by annealing at 700°C, whereas the distortion at the shallower depth was not recovered completely by annealing at 900°C. A discussion on the nature of the two kinds of lattice distortion is presented.

Original language	English
Pages (from-to)	108-111
Number of pages	4
Journal	Surface and Coatings Technology
Volume	122
Issue number	2-3
DOIs	https://doi.org/10.1016/S0257-8972(99)00327-8
Publication status	Published - 1999 Dec 15

Keywords

Lattice disorder
Nitrogen-ion implantation
Single crystal Mn-Zn ferrite

ASJC Scopus subject areas

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/S0257-8972(99)00327-8

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title = "Lattice disorder induced by nitrogen-ion implantation in single crystal Mn-Zn ferrite",

abstract = "Single crystal Mn-Zn ferrite was implanted with nitrogen molecule ions (N+2) at 100keV to investigate the annealing behavior of the implantation-induced damage at temperatures of 400-900°C. The lattice disorder was investigated by Rutherford backscattering combined with ion channeling. The annealing behavior of the lattice disorder revealed that two kinds of lattice distortion exist in the implanted crystal; the distortion that exists at a depth greater than the projected range was recovered by annealing at 700°C, whereas the distortion at the shallower depth was not recovered completely by annealing at 900°C. A discussion on the nature of the two kinds of lattice distortion is presented.",

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T1 - Lattice disorder induced by nitrogen-ion implantation in single crystal Mn-Zn ferrite

AU - Takahiro, K.

AU - Nagata, S.

AU - Kishimoto, M.

AU - Yamaguchi, S.

AU - Mamiya, S.

AU - Gotoh, K.

PY - 1999/12/15

Y1 - 1999/12/15

N2 - Single crystal Mn-Zn ferrite was implanted with nitrogen molecule ions (N+2) at 100keV to investigate the annealing behavior of the implantation-induced damage at temperatures of 400-900°C. The lattice disorder was investigated by Rutherford backscattering combined with ion channeling. The annealing behavior of the lattice disorder revealed that two kinds of lattice distortion exist in the implanted crystal; the distortion that exists at a depth greater than the projected range was recovered by annealing at 700°C, whereas the distortion at the shallower depth was not recovered completely by annealing at 900°C. A discussion on the nature of the two kinds of lattice distortion is presented.

AB - Single crystal Mn-Zn ferrite was implanted with nitrogen molecule ions (N+2) at 100keV to investigate the annealing behavior of the implantation-induced damage at temperatures of 400-900°C. The lattice disorder was investigated by Rutherford backscattering combined with ion channeling. The annealing behavior of the lattice disorder revealed that two kinds of lattice distortion exist in the implanted crystal; the distortion that exists at a depth greater than the projected range was recovered by annealing at 700°C, whereas the distortion at the shallower depth was not recovered completely by annealing at 900°C. A discussion on the nature of the two kinds of lattice distortion is presented.

KW - Lattice disorder

KW - Nitrogen-ion implantation

KW - Single crystal Mn-Zn ferrite

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Lattice disorder induced by nitrogen-ion implantation in single crystal Mn-Zn ferrite

Abstract

Keywords

ASJC Scopus subject areas

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