Lattice-matched epitaxial growth of 3C-SiC on 6H-SiC substrates using an alternate supply of disilane (Si2H6) and acetylene (C 2H2) gas molecular beams in a high vacuum was carried out. On 6H-SiC(0001̄) substrates, epilayers of 3C-SiC(1̄1̄1̄) with a double-positioning twin structure were obtained. On the other hand, single crystalline 3C-SiC(001) epilayers without twin structure were obtained on 6H-SiC(01̄14̄) substrates even at low temperatures down to 850°C.
|Number of pages||3|
|Journal||Applied Physics Letters|
|Publication status||Published - 1992|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)