Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source molecular beam epitaxy

Tatsuo Yoshinobu; Hideaki Mitsui; Iwao Izumikawa; Takashi Fuyuki; Hiroyuki Matsunami

doi:10.1063/1.107430

Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source molecular beam epitaxy

Tatsuo Yoshinobu, Hideaki Mitsui, Iwao Izumikawa, Takashi Fuyuki, Hiroyuki Matsunami

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Lattice-matched epitaxial growth of 3C-SiC on 6H-SiC substrates using an alternate supply of disilane (Si₂H₆) and acetylene (C ₂H₂) gas molecular beams in a high vacuum was carried out. On 6H-SiC(0001̄) substrates, epilayers of 3C-SiC(1̄1̄1̄) with a double-positioning twin structure were obtained. On the other hand, single crystalline 3C-SiC(001) epilayers without twin structure were obtained on 6H-SiC(01̄14̄) substrates even at low temperatures down to 850°C.

Original language	English
Pages (from-to)	824-826
Number of pages	3
Journal	Applied Physics Letters
Volume	60
Issue number	7
DOIs	https://doi.org/10.1063/1.107430
Publication status	Published - 1992
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source molecular beam epitaxy",

abstract = "Lattice-matched epitaxial growth of 3C-SiC on 6H-SiC substrates using an alternate supply of disilane (Si2H6) and acetylene (C 2H2) gas molecular beams in a high vacuum was carried out. On 6H-SiC(000{\=1}) substrates, epilayers of 3C-SiC({\=1}{\=1}{\=1}) with a double-positioning twin structure were obtained. On the other hand, single crystalline 3C-SiC(001) epilayers without twin structure were obtained on 6H-SiC(0{\=1}1{\=4}) substrates even at low temperatures down to 850°C.",

author = "Tatsuo Yoshinobu and Hideaki Mitsui and Iwao Izumikawa and Takashi Fuyuki and Hiroyuki Matsunami",

year = "1992",

doi = "10.1063/1.107430",

language = "English",

volume = "60",

pages = "824--826",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source molecular beam epitaxy

AU - Yoshinobu, Tatsuo

AU - Mitsui, Hideaki

AU - Izumikawa, Iwao

AU - Fuyuki, Takashi

AU - Matsunami, Hiroyuki

PY - 1992

Y1 - 1992

N2 - Lattice-matched epitaxial growth of 3C-SiC on 6H-SiC substrates using an alternate supply of disilane (Si2H6) and acetylene (C 2H2) gas molecular beams in a high vacuum was carried out. On 6H-SiC(0001̄) substrates, epilayers of 3C-SiC(1̄1̄1̄) with a double-positioning twin structure were obtained. On the other hand, single crystalline 3C-SiC(001) epilayers without twin structure were obtained on 6H-SiC(01̄14̄) substrates even at low temperatures down to 850°C.

AB - Lattice-matched epitaxial growth of 3C-SiC on 6H-SiC substrates using an alternate supply of disilane (Si2H6) and acetylene (C 2H2) gas molecular beams in a high vacuum was carried out. On 6H-SiC(0001̄) substrates, epilayers of 3C-SiC(1̄1̄1̄) with a double-positioning twin structure were obtained. On the other hand, single crystalline 3C-SiC(001) epilayers without twin structure were obtained on 6H-SiC(01̄14̄) substrates even at low temperatures down to 850°C.

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JF - Applied Physics Letters

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Lattice-matched epitaxial growth of single crystalline 3C-SiC on 6H-SiC substrates by gas source molecular beam epitaxy

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