Lattice relaxation mechanism of ZnO thin films grown on c- Al 2O3 substrates by plasma-assisted molecular-beam epitaxy

S. H. Park; T. Hanada; D. C. Oh; T. Minegishi; H. Goto; G. Fujimoto; J. S. Park; I. H. Im; J. H. Chang; M. W. Cho; T. Yao; K. Inaba

doi:10.1063/1.2813021

Lattice relaxation mechanism of ZnO thin films grown on c- Al ₂O₃ substrates by plasma-assisted molecular-beam epitaxy

S. H. Park, T. Hanada, D. C. Oh, T. Minegishi, H. Goto, G. Fujimoto, J. S. Park, I. H. Im, J. H. Chang, M. W. Cho, T. Yao, K. Inaba

IMR - Materials Design Division

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Abstract

We report on the lattice relaxation mechanism of ZnO films grown on c- Al2 O3 substrates by plasma-assisted molecular-beam epitaxy. The lattice relaxation of ZnO films with various thicknesses up to 2000 nm is investigated by using both in situ time-resolved reflection high energy electron diffraction observation during the initial growth and absolute lattice constant measurements (Bond method) for grown films. The residual strain in the films is explained in terms of lattice misfit relaxation (compression) at the growth temperature and thermal stress (tension) due to the difference of growth and measurement temperatures. In thick films (>1 μm), the residual tensile strain begins to relax by bending and microcrack formation.

Original language	English
Article number	231904
Journal	Applied Physics Letters
Volume	91
Issue number	23
DOIs	https://doi.org/10.1063/1.2813021
Publication status	Published - 2007

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title = "Lattice relaxation mechanism of ZnO thin films grown on c- Al 2O3 substrates by plasma-assisted molecular-beam epitaxy",

abstract = "We report on the lattice relaxation mechanism of ZnO films grown on c- Al2 O3 substrates by plasma-assisted molecular-beam epitaxy. The lattice relaxation of ZnO films with various thicknesses up to 2000 nm is investigated by using both in situ time-resolved reflection high energy electron diffraction observation during the initial growth and absolute lattice constant measurements (Bond method) for grown films. The residual strain in the films is explained in terms of lattice misfit relaxation (compression) at the growth temperature and thermal stress (tension) due to the difference of growth and measurement temperatures. In thick films (>1 μm), the residual tensile strain begins to relax by bending and microcrack formation.",

author = "Park, {S. H.} and T. Hanada and Oh, {D. C.} and T. Minegishi and H. Goto and G. Fujimoto and Park, {J. S.} and Im, {I. H.} and Chang, {J. H.} and Cho, {M. W.} and T. Yao and K. Inaba",

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T1 - Lattice relaxation mechanism of ZnO thin films grown on c- Al 2O3 substrates by plasma-assisted molecular-beam epitaxy

AU - Park, S. H.

AU - Hanada, T.

AU - Oh, D. C.

AU - Minegishi, T.

AU - Goto, H.

AU - Fujimoto, G.

AU - Park, J. S.

AU - Im, I. H.

AU - Chang, J. H.

AU - Cho, M. W.

AU - Yao, T.

AU - Inaba, K.

PY - 2007

Y1 - 2007

N2 - We report on the lattice relaxation mechanism of ZnO films grown on c- Al2 O3 substrates by plasma-assisted molecular-beam epitaxy. The lattice relaxation of ZnO films with various thicknesses up to 2000 nm is investigated by using both in situ time-resolved reflection high energy electron diffraction observation during the initial growth and absolute lattice constant measurements (Bond method) for grown films. The residual strain in the films is explained in terms of lattice misfit relaxation (compression) at the growth temperature and thermal stress (tension) due to the difference of growth and measurement temperatures. In thick films (>1 μm), the residual tensile strain begins to relax by bending and microcrack formation.

AB - We report on the lattice relaxation mechanism of ZnO films grown on c- Al2 O3 substrates by plasma-assisted molecular-beam epitaxy. The lattice relaxation of ZnO films with various thicknesses up to 2000 nm is investigated by using both in situ time-resolved reflection high energy electron diffraction observation during the initial growth and absolute lattice constant measurements (Bond method) for grown films. The residual strain in the films is explained in terms of lattice misfit relaxation (compression) at the growth temperature and thermal stress (tension) due to the difference of growth and measurement temperatures. In thick films (>1 μm), the residual tensile strain begins to relax by bending and microcrack formation.

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Lattice relaxation mechanism of ZnO thin films grown on c- Al ₂O₃ substrates by plasma-assisted molecular-beam epitaxy

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