Layer-by-layer etching of Si(111) surface by oxygen at elevated temperature

Tadahiro Komeda; Yasushiro Nishioka

doi:10.1143/jjap.36.1582

Layer-by-layer etching of Si(111) surface by oxygen at elevated temperature

Tadahiro Komeda, Yasushiro Nishioka

IMRAM - Division of Measurements

Texas Instruments

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The kinetics of Si surface etching with gas-phase O₂ was examined using scanning tunneling microscopy (STM), which was intended for the application of gas-phase etching by O₂ for Si surface flattening. High-temperature STM observation showed the recession of the step edges with the O₂ flux of 5 × 10^-8 Torr on Si(111) at an elevated temperature of ∼800°C in real time. The high-resolution image clearly showed that the terrace was disordered during the exposure to O₂ gas. The recession of step edges is considered to be the result of the detachment of Si atoms from the step edges to fill the defects created by the desorption of SiO.

Original language	English
Pages (from-to)	1582-1585
Number of pages	4
Journal	Japanese Journal of Applied Physics
Volume	36
Issue number	3 SUPPL. B
DOIs	https://doi.org/10.1143/jjap.36.1582
Publication status	Published - 1997 Mar

Keywords

Elevated temperature
Oxidation
Scanning tunneling microscopy (STM)
Si(111)-7×7
Step motion
Surface etching

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title = "Layer-by-layer etching of Si(111) surface by oxygen at elevated temperature",

abstract = "The kinetics of Si surface etching with gas-phase O2 was examined using scanning tunneling microscopy (STM), which was intended for the application of gas-phase etching by O2 for Si surface flattening. High-temperature STM observation showed the recession of the step edges with the O2 flux of 5 × 10-8 Torr on Si(111) at an elevated temperature of ∼800°C in real time. The high-resolution image clearly showed that the terrace was disordered during the exposure to O2 gas. The recession of step edges is considered to be the result of the detachment of Si atoms from the step edges to fill the defects created by the desorption of SiO.",

keywords = "Elevated temperature, Oxidation, Scanning tunneling microscopy (STM), Si(111)-7×7, Step motion, Surface etching",

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T1 - Layer-by-layer etching of Si(111) surface by oxygen at elevated temperature

AU - Komeda, Tadahiro

AU - Nishioka, Yasushiro

PY - 1997/3

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N2 - The kinetics of Si surface etching with gas-phase O2 was examined using scanning tunneling microscopy (STM), which was intended for the application of gas-phase etching by O2 for Si surface flattening. High-temperature STM observation showed the recession of the step edges with the O2 flux of 5 × 10-8 Torr on Si(111) at an elevated temperature of ∼800°C in real time. The high-resolution image clearly showed that the terrace was disordered during the exposure to O2 gas. The recession of step edges is considered to be the result of the detachment of Si atoms from the step edges to fill the defects created by the desorption of SiO.

AB - The kinetics of Si surface etching with gas-phase O2 was examined using scanning tunneling microscopy (STM), which was intended for the application of gas-phase etching by O2 for Si surface flattening. High-temperature STM observation showed the recession of the step edges with the O2 flux of 5 × 10-8 Torr on Si(111) at an elevated temperature of ∼800°C in real time. The high-resolution image clearly showed that the terrace was disordered during the exposure to O2 gas. The recession of step edges is considered to be the result of the detachment of Si atoms from the step edges to fill the defects created by the desorption of SiO.

KW - Elevated temperature

KW - Oxidation

KW - Scanning tunneling microscopy (STM)

KW - Si(111)-7×7

KW - Step motion

KW - Surface etching

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Layer-by-layer etching of Si(111) surface by oxygen at elevated temperature

Abstract

Keywords

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