Abstract
The layer-by-layer growth of high-optical-quality ZnO thin films on atomically smooth and lattice relaxed ZnO buffer layer was discussed. The intensity oscillation of reflection high-energy electron diffraction persisted for more than a 100-nm film deposition under optimized conditions on buffer layer. It was found that the thin films showed free exciton emissions in a 5 K photoluminescence.
Original language | English |
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Pages (from-to) | 2784-2786 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 83 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2003 Oct 6 |