Abstract
We demonstrate a technique for growing fine molecular films on a monolayer scale. We achieve layer-by-layer growth under thermally equilibrium condition by precisely controlling the conditions of an ultra-slow deposition technique. This technique is applicable to various kinds of p-type and n-type organic semiconductors and makes it possible to form a hetero-molecular interface (p-n junction) with molecular level flatness. The technique was used to produce a molecular superlattice, which enables the well-controlled design of energy level alignments in organic semiconductors.
Original language | English |
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Pages (from-to) | 74-77 |
Number of pages | 4 |
Journal | Thin Solid Films |
Volume | 554 |
DOIs | |
Publication status | Published - 2014 Mar 3 |
Keywords
- AFM
- Hetero interface
- Hot-wall deposition
- Molecular layers
- Super lattice
- X-ray reflection
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry