Leakage current property of Pb(Zr0.4,Ti0.6)O 3 thin-film capacitors with highly rectangular hysteresis property

Soichiro Okamura; Mitsumasa Tanimura; Hiromi Shima; Hiroshi Naganuma

doi:10.1109/ISAF.2007.4393176

Leakage current property of Pb(Zr_0.4,Ti_0.6)O ₃ thin-film capacitors with highly rectangular hysteresis property

Soichiro Okamura, Mitsumasa Tanimura, Hiromi Shima, Hiroshi Naganuma

Center for Innovative Integrated Electronic Systems (CIES)

Tokyo University of Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The Pb(Zr_{0 4},Ti_{0 6})O₃ thin-film capacitors with top and bottom Pt electrodes were prepared by chemical solution deposition using the precursor solutions with Pb contents ranging from 104 to 119%. Leakage current densities of the PZT capacitors monotonically decreased with increasing Pb contents. In the Pb110%-PZT capacitor, a conduction mechanism changed from the Schottky emission to the Poole-Frenkel at an electric field of approximately 80 kV/cm at RT while the leakage current was limited only by the Poole-Frenkel in case of less Pb contents. In the Pb110%-PZT capacitor, the Schottky barrier height and a relative permittivity were estimated to be 1.1 eV and 4.8, respectively, and the activation energy of trap sites in the Poole-Frenkel conduction was estimated to be 0.5 eV.

Original language	English
Title of host publication	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages	91-93
Number of pages	3
DOIs	https://doi.org/10.1109/ISAF.2007.4393176
Publication status	Published - 2007
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: 2007 May 27 → 2007 May 31

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics

Conference

Conference	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/Territory	Japan
City	Nara-city
Period	07/5/27 → 07/5/31

Access to Document

10.1109/ISAF.2007.4393176

Cite this

Okamura, S., Tanimura, M., Shima, H., & Naganuma, H. (2007). Leakage current property of Pb(Zr_0.4,Ti_0.6)O ₃ thin-film capacitors with highly rectangular hysteresis property. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 91-93). Article 4393176 (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393176

@inproceedings{94076a18e9c34331b3f4056df99d7c74,

title = "Leakage current property of Pb(Zr0.4,Ti0.6)O 3 thin-film capacitors with highly rectangular hysteresis property",

abstract = "The Pb(Zr0 4,Ti0 6)O3 thin-film capacitors with top and bottom Pt electrodes were prepared by chemical solution deposition using the precursor solutions with Pb contents ranging from 104 to 119%. Leakage current densities of the PZT capacitors monotonically decreased with increasing Pb contents. In the Pb110%-PZT capacitor, a conduction mechanism changed from the Schottky emission to the Poole-Frenkel at an electric field of approximately 80 kV/cm at RT while the leakage current was limited only by the Poole-Frenkel in case of less Pb contents. In the Pb110%-PZT capacitor, the Schottky barrier height and a relative permittivity were estimated to be 1.1 eV and 4.8, respectively, and the activation energy of trap sites in the Poole-Frenkel conduction was estimated to be 0.5 eV.",

author = "Soichiro Okamura and Mitsumasa Tanimura and Hiromi Shima and Hiroshi Naganuma",

year = "2007",

doi = "10.1109/ISAF.2007.4393176",

language = "English",

isbn = "1424413338",

series = "IEEE International Symposium on Applications of Ferroelectrics",

pages = "91--93",

booktitle = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF",

note = "2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF ; Conference date: 27-05-2007 Through 31-05-2007",

}

Okamura, S, Tanimura, M, Shima, H & Naganuma, H 2007, Leakage current property of Pb(Zr_0.4,Ti_0.6)O ₃ thin-film capacitors with highly rectangular hysteresis property. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393176, IEEE International Symposium on Applications of Ferroelectrics, pp. 91-93, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 07/5/27. https://doi.org/10.1109/ISAF.2007.4393176

Leakage current property of Pb(Zr_0.4,Ti_0.6)O ₃ thin-film capacitors with highly rectangular hysteresis property. / Okamura, Soichiro; Tanimura, Mitsumasa; Shima, Hiromi et al.
2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 91-93 4393176 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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