Lift-off patterning of thin Au films on Si surfaces with atomic force microscopy

Won Chul Moon, Tatsuo Yoshinobu, Hiroshi Iwasaki

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


We studied a new lift-off process of thin Au film on silicon surfaces in nanometer-scale, combining anodic oxidation patterning with AFM, deposition of Au thin film on the patterned substrate and chemical etching processes of the Si oxide underneath the Au film. For Au films of thickness of 2-5 nm, the Au films on the Si oxide patterns were left unbroken and bent down to stick to Si surface after the removal of the oxide by the chemical etching. For an Au film of 1 nm in thickness, it was possible to lift-off the Au film on oxide patterns of the lines and dots in nanometer-scale using Si oxide as a sacrificial mask. (C) 2000 Elsevier Science B.V.

Original languageEnglish
Pages (from-to)119-123
Number of pages5
Issue number1-4
Publication statusPublished - 2000 Feb
EventThe International Conference on Scanning Probe Microscopy, Cantilever Sensors and Nanostructures (SPM '99) - Seattle, WA, USA
Duration: 1999 May 301999 Jun 1


  • AFM
  • Anodic oxidation
  • Chemical etching
  • Lift-off
  • Silicon


Dive into the research topics of 'Lift-off patterning of thin Au films on Si surfaces with atomic force microscopy'. Together they form a unique fingerprint.

Cite this