Light-addressable potentiometric fluoride (F-) sensor

Abu Bakar Md Ismail; Koji Furuichi; Tatsuo Yoshinobu; Hiroshi Iwasaki

doi:10.1016/S0925-4005(02)00153-3

Light-addressable potentiometric fluoride (F^-) sensor

Abu Bakar Md Ismail, Koji Furuichi, Tatsuo Yoshinobu, Hiroshi Iwasaki

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

In this work, light-addressable potentiometric sensor (LAPS) has been investigated for fluoride (F^-) sensing in aqueous medium. Vacuum-evaporated LaF₃ has been studied as the fluoride-sensing layer in the LAPS heterostructure. Instead of using the conventional structure of Si/SiO₂/LaF₃ or Si/SiO₂/Si₃N₄/LaF₃, a simple structure of Si/LaF₃ has been prepared as the LAP fluoride-sensor. The sensor was prepared with 50 nm LaF₃ layer on 300 μm Si. The sensor hardly shows fluoride-sensitivity without annealing, but it shows quite linear response in the range of pF1-5 with a sensitivity of ≈ 49 mV/pF for LaF₃ layer annealed at 400 °C for 10 min. From the experimental result it appears that Si/LaF₃ structure can be used for the sensing and imaging the distribution of fluoride ion in aqueous medium.

Original language	English
Pages (from-to)	94-97
Number of pages	4
Journal	Sensors and Actuators, B: Chemical
Volume	86
Issue number	1
DOIs	https://doi.org/10.1016/S0925-4005(02)00153-3
Publication status	Published - 2002 Aug 30
Externally published	Yes

Keywords

Capacitive EIS structure
Fluoride-sensor
Light-addressable potentiometric sensor (LAPS)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering
Materials Chemistry

Access to Document

10.1016/S0925-4005(02)00153-3

Cite this

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title = "Light-addressable potentiometric fluoride (F-) sensor",

abstract = "In this work, light-addressable potentiometric sensor (LAPS) has been investigated for fluoride (F-) sensing in aqueous medium. Vacuum-evaporated LaF3 has been studied as the fluoride-sensing layer in the LAPS heterostructure. Instead of using the conventional structure of Si/SiO2/LaF3 or Si/SiO2/Si3N4/LaF3, a simple structure of Si/LaF3 has been prepared as the LAP fluoride-sensor. The sensor was prepared with 50 nm LaF3 layer on 300 μm Si. The sensor hardly shows fluoride-sensitivity without annealing, but it shows quite linear response in the range of pF1-5 with a sensitivity of ≈ 49 mV/pF for LaF3 layer annealed at 400 °C for 10 min. From the experimental result it appears that Si/LaF3 structure can be used for the sensing and imaging the distribution of fluoride ion in aqueous medium.",

keywords = "Capacitive EIS structure, Fluoride-sensor, Light-addressable potentiometric sensor (LAPS)",

author = "Ismail, {Abu Bakar Md} and Koji Furuichi and Tatsuo Yoshinobu and Hiroshi Iwasaki",

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T1 - Light-addressable potentiometric fluoride (F-) sensor

AU - Ismail, Abu Bakar Md

AU - Furuichi, Koji

AU - Yoshinobu, Tatsuo

AU - Iwasaki, Hiroshi

PY - 2002/8/30

Y1 - 2002/8/30

N2 - In this work, light-addressable potentiometric sensor (LAPS) has been investigated for fluoride (F-) sensing in aqueous medium. Vacuum-evaporated LaF3 has been studied as the fluoride-sensing layer in the LAPS heterostructure. Instead of using the conventional structure of Si/SiO2/LaF3 or Si/SiO2/Si3N4/LaF3, a simple structure of Si/LaF3 has been prepared as the LAP fluoride-sensor. The sensor was prepared with 50 nm LaF3 layer on 300 μm Si. The sensor hardly shows fluoride-sensitivity without annealing, but it shows quite linear response in the range of pF1-5 with a sensitivity of ≈ 49 mV/pF for LaF3 layer annealed at 400 °C for 10 min. From the experimental result it appears that Si/LaF3 structure can be used for the sensing and imaging the distribution of fluoride ion in aqueous medium.

AB - In this work, light-addressable potentiometric sensor (LAPS) has been investigated for fluoride (F-) sensing in aqueous medium. Vacuum-evaporated LaF3 has been studied as the fluoride-sensing layer in the LAPS heterostructure. Instead of using the conventional structure of Si/SiO2/LaF3 or Si/SiO2/Si3N4/LaF3, a simple structure of Si/LaF3 has been prepared as the LAP fluoride-sensor. The sensor was prepared with 50 nm LaF3 layer on 300 μm Si. The sensor hardly shows fluoride-sensitivity without annealing, but it shows quite linear response in the range of pF1-5 with a sensitivity of ≈ 49 mV/pF for LaF3 layer annealed at 400 °C for 10 min. From the experimental result it appears that Si/LaF3 structure can be used for the sensing and imaging the distribution of fluoride ion in aqueous medium.

KW - Capacitive EIS structure

KW - Fluoride-sensor

KW - Light-addressable potentiometric sensor (LAPS)

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