Light emission spectra of AlGaAs/GaAs multiquantum wells induced by scanning tunneling microscope

T. Tsuruoka; Y. Ohizumi; S. Ushioda; Y. Ohno; H. Ohno

doi:10.1063/1.122200

Light emission spectra of AlGaAs/GaAs multiquantum wells induced by scanning tunneling microscope

T. Tsuruoka, Y. Ohizumi, S. Ushioda, Y. Ohno, H. Ohno

Leadership

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We have investigated the scanning-tunneling-microscope light emission (STM-LE) spectra of p-Al_0.4Ga_0.6As/p-GaAs multiquantum wells. The injection current level was kept as low as 0.1-0.5 nA to ensure that the sample is not damaged by the tunneling current. This is the current level ordinarily used for taking STM images. The peak energy of the emission shifts to the high energy side with decreasing well widths. A corresponding peak shift behavior was also observed in the photoluminescence (PL) spectra for the same samples. From comparisons of the STM-LE and the PL spectra, we find that although there is a difference in the excitation process, the final recombination process is identical in both cases.

Original language	English
Pages (from-to)	1544-1546
Number of pages	3
Journal	Applied Physics Letters
Volume	73
Issue number	11
DOIs	https://doi.org/10.1063/1.122200
Publication status	Published - 1998

Access to Document

10.1063/1.122200

Cite this

@article{3e84e156591546f481df0c3b667b5a6d,

title = "Light emission spectra of AlGaAs/GaAs multiquantum wells induced by scanning tunneling microscope",

abstract = "We have investigated the scanning-tunneling-microscope light emission (STM-LE) spectra of p-Al0.4Ga0.6As/p-GaAs multiquantum wells. The injection current level was kept as low as 0.1-0.5 nA to ensure that the sample is not damaged by the tunneling current. This is the current level ordinarily used for taking STM images. The peak energy of the emission shifts to the high energy side with decreasing well widths. A corresponding peak shift behavior was also observed in the photoluminescence (PL) spectra for the same samples. From comparisons of the STM-LE and the PL spectra, we find that although there is a difference in the excitation process, the final recombination process is identical in both cases.",

author = "T. Tsuruoka and Y. Ohizumi and S. Ushioda and Y. Ohno and H. Ohno",

year = "1998",

doi = "10.1063/1.122200",

language = "English",

volume = "73",

pages = "1544--1546",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Light emission spectra of AlGaAs/GaAs multiquantum wells induced by scanning tunneling microscope

AU - Tsuruoka, T.

AU - Ohizumi, Y.

AU - Ushioda, S.

AU - Ohno, Y.

AU - Ohno, H.

PY - 1998

Y1 - 1998

N2 - We have investigated the scanning-tunneling-microscope light emission (STM-LE) spectra of p-Al0.4Ga0.6As/p-GaAs multiquantum wells. The injection current level was kept as low as 0.1-0.5 nA to ensure that the sample is not damaged by the tunneling current. This is the current level ordinarily used for taking STM images. The peak energy of the emission shifts to the high energy side with decreasing well widths. A corresponding peak shift behavior was also observed in the photoluminescence (PL) spectra for the same samples. From comparisons of the STM-LE and the PL spectra, we find that although there is a difference in the excitation process, the final recombination process is identical in both cases.

AB - We have investigated the scanning-tunneling-microscope light emission (STM-LE) spectra of p-Al0.4Ga0.6As/p-GaAs multiquantum wells. The injection current level was kept as low as 0.1-0.5 nA to ensure that the sample is not damaged by the tunneling current. This is the current level ordinarily used for taking STM images. The peak energy of the emission shifts to the high energy side with decreasing well widths. A corresponding peak shift behavior was also observed in the photoluminescence (PL) spectra for the same samples. From comparisons of the STM-LE and the PL spectra, we find that although there is a difference in the excitation process, the final recombination process is identical in both cases.

UR - http://www.scopus.com/inward/record.url?scp=0001647595&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0001647595&partnerID=8YFLogxK

U2 - 10.1063/1.122200

DO - 10.1063/1.122200

M3 - Article

AN - SCOPUS:0001647595

SN - 0003-6951

VL - 73

SP - 1544

EP - 1546

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

ER -

Light emission spectra of AlGaAs/GaAs multiquantum wells induced by scanning tunneling microscope

Abstract

Access to Document

Other files and links

Fingerprint

Cite this