Linear magnetoresistance in a topological insulator Ru2Sn3

Y. Shiomi, E. Saitoh

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)


We have studied magnetotransport properties of a topological insulator material Ru2Sn3. Bulk single crystals of Ru2Sn3 were grown by a Bi flux method. The resistivity is semiconducting at high temperatures above 160 K, while it becomes metallic below 160 K. Nonlinear field dependence of Hall resistivity in the metallic region shows conduction of multiple carriers at low temperatures. In the high-temperature semiconducting region, magnetoresistance exhibits a conventional quadratic magnetic-field dependence. In the low-temperature metallic region, however, high-field magnetoresistance is clearly linear with magnetic fields, signaling a linear dispersion in the low-temperature electronic structure. Small changes in the magnetoresistance magnitude with respect to the magnetic field angle indicate that bulk electron carriers are responsible mainly for the observed linear magnetoresistance.

Original languageEnglish
Article number035011
JournalAIP Advances
Issue number3
Publication statusPublished - 2017 Mar 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)


Dive into the research topics of 'Linear magnetoresistance in a topological insulator Ru2Sn3'. Together they form a unique fingerprint.

Cite this