Liner- and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status

Linghan Chen; Daisuke Ando; Yuji Sutou; Shinji Yokogawa; Junichi Koike

doi:10.1016/j.apsusc.2019.143810

Liner- and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status

Linghan Chen, Daisuke Ando, Yuji Sutou, Shinji Yokogawa, Junichi Koike

ENG - Materials Science

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

This study reports the time-dependent-dielectric-breakdown (TDDB) reliability of NiAl on SiO₂ without any barrier layer. NiAl was indicated to exhibit superior TDDB reliability in comparison to Cu/TaN in the time-to-failure (4200 s versus 240 s, at 4 MV/cm at 200 °C) and in the breakdown activation energy under 4 MV/cm (1.17 eV versus 0.87 eV). Moreover, NiAl was found to form an atomically thin and self-limiting Al oxide layer at the NiAl/SiO₂ interface, and this Al oxide layer, together with the large cohesive energy of NiAl, was considered to be possible origin for the excellent reliability. The results demonstrate a great potential of NiAl as a liner- and barrier-free interconnect material.

Original language	English
Article number	143810
Journal	Applied Surface Science
Volume	497
DOIs	https://doi.org/10.1016/j.apsusc.2019.143810
Publication status	Published - 2019 Dec 15

Keywords

Interconnect
Interface
NiAl
TDDB

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10.1016/j.apsusc.2019.143810

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title = "Liner- and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status",

abstract = "This study reports the time-dependent-dielectric-breakdown (TDDB) reliability of NiAl on SiO2 without any barrier layer. NiAl was indicated to exhibit superior TDDB reliability in comparison to Cu/TaN in the time-to-failure (4200 s versus 240 s, at 4 MV/cm at 200 °C) and in the breakdown activation energy under 4 MV/cm (1.17 eV versus 0.87 eV). Moreover, NiAl was found to form an atomically thin and self-limiting Al oxide layer at the NiAl/SiO2 interface, and this Al oxide layer, together with the large cohesive energy of NiAl, was considered to be possible origin for the excellent reliability. The results demonstrate a great potential of NiAl as a liner- and barrier-free interconnect material.",

keywords = "Interconnect, Interface, NiAl, TDDB",

author = "Linghan Chen and Daisuke Ando and Yuji Sutou and Shinji Yokogawa and Junichi Koike",

note = "Funding Information: This work was supported by JSPS KAKENHI Grant No. 18H03830 . Publisher Copyright: {\textcopyright} 2019 Elsevier B.V.",

year = "2019",

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doi = "10.1016/j.apsusc.2019.143810",

language = "English",

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journal = "Applied Surface Science",

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TY - JOUR

T1 - Liner- and barrier-free NiAl metallization

T2 - A perspective from TDDB reliability and interface status

AU - Chen, Linghan

AU - Ando, Daisuke

AU - Sutou, Yuji

AU - Yokogawa, Shinji

AU - Koike, Junichi

PY - 2019/12/15

Y1 - 2019/12/15

N2 - This study reports the time-dependent-dielectric-breakdown (TDDB) reliability of NiAl on SiO2 without any barrier layer. NiAl was indicated to exhibit superior TDDB reliability in comparison to Cu/TaN in the time-to-failure (4200 s versus 240 s, at 4 MV/cm at 200 °C) and in the breakdown activation energy under 4 MV/cm (1.17 eV versus 0.87 eV). Moreover, NiAl was found to form an atomically thin and self-limiting Al oxide layer at the NiAl/SiO2 interface, and this Al oxide layer, together with the large cohesive energy of NiAl, was considered to be possible origin for the excellent reliability. The results demonstrate a great potential of NiAl as a liner- and barrier-free interconnect material.

AB - This study reports the time-dependent-dielectric-breakdown (TDDB) reliability of NiAl on SiO2 without any barrier layer. NiAl was indicated to exhibit superior TDDB reliability in comparison to Cu/TaN in the time-to-failure (4200 s versus 240 s, at 4 MV/cm at 200 °C) and in the breakdown activation energy under 4 MV/cm (1.17 eV versus 0.87 eV). Moreover, NiAl was found to form an atomically thin and self-limiting Al oxide layer at the NiAl/SiO2 interface, and this Al oxide layer, together with the large cohesive energy of NiAl, was considered to be possible origin for the excellent reliability. The results demonstrate a great potential of NiAl as a liner- and barrier-free interconnect material.

KW - Interconnect

KW - Interface

KW - NiAl

KW - TDDB

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DO - 10.1016/j.apsusc.2019.143810

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VL - 497

JO - Applied Surface Science

JF - Applied Surface Science

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ER -

Liner- and barrier-free NiAl metallization: A perspective from TDDB reliability and interface status

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Keywords

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