@inproceedings{53b2779d6a594b44a0014f9229ccbb88,
title = "Lithium-niobate-based surface acoustic wave device directly integrated on IC",
abstract = "In this study, a LiNbO 3-based surface acoustic wave (SAW) resonator was directly integrated with a CMOS sustaining amplifier by new wafer-bonding-based integration technology. The developed integration technology has overcome large thermal expansion mismatch between LiNbO 3 (15-17 ppm/K along a-axis) and Si (2.6 ppm/K) by temporal wafer supporting and low-temperature Au-Au bonding. Two kinds of bonding, UV polymer bonding for temporal wafer supporting and Au-Au bonding following plasma surface activation, are key process technologies. A 500 MHz one-chip SAW oscillator was prototyped and evaluated. A low phase noise of -160 dBc/Hz at 500 kHz offset was achieved.",
keywords = "Integration, Lithium niobate, Phase noise, SAW oscillator, Wafer bonding",
author = "Park, {Kyeong Dong} and Masayoshi Esashi and Shuji Tanaka",
year = "2011",
doi = "10.1109/ULTSYM.2011.0487",
language = "English",
isbn = "9781457712531",
series = "IEEE International Ultrasonics Symposium, IUS",
pages = "1956--1959",
booktitle = "2011 IEEE International Ultrasonics Symposium, IUS 2011",
note = "2011 IEEE International Ultrasonics Symposium, IUS 2011 ; Conference date: 18-10-2011 Through 21-10-2011",
}