TY - JOUR
T1 - Local C - V mapping for ferroelectrics using scanning nonlinear dielectric microscopy
AU - Hiranaga, Yoshiomi
AU - Mimura, Takanori
AU - Shimizu, Takao
AU - Funakubo, Hiroshi
AU - Cho, Yasuo
N1 - Funding Information:
This work was supported in part by Grants-in-Aid for Scientific Research (Nos. 16H06360 and 18K04932) from the Japan Society for the Promotion of Science (JSPS).
Publisher Copyright:
© 2020 Author(s).
PY - 2020/12/28
Y1 - 2020/12/28
N2 - Detailed analysis of local polarization switching will promote the further development of a wide range of applications using ferroelectrics. Here, we propose a local C- V mapping technique using scanning nonlinear dielectric microscopy (SNDM) that enables visualization of dynamic ferroelectric switching behavior in real space. Using this method, C- V butterfly curves characteristic of ferroelectrics can be measured on a scanning probe microscopy platform with nanoscale resolution by virtue of the high capacitance-detection sensitivity of SNDM. This provides real-space mapping of the net switchable polarization, the switching voltage, and the local imprint with a short measurement time (e.g., 10 min or less for 256 × 256 pixels). Furthermore, the proposed method will be useful for study of the electric-field response of domain walls. In this paper, we present some examples of experiments with LiTaO 3 single crystals and HfO 2-based ferroelectric thin films and give an overview of what kind of evaluation is possible with the local C- V mapping technique.
AB - Detailed analysis of local polarization switching will promote the further development of a wide range of applications using ferroelectrics. Here, we propose a local C- V mapping technique using scanning nonlinear dielectric microscopy (SNDM) that enables visualization of dynamic ferroelectric switching behavior in real space. Using this method, C- V butterfly curves characteristic of ferroelectrics can be measured on a scanning probe microscopy platform with nanoscale resolution by virtue of the high capacitance-detection sensitivity of SNDM. This provides real-space mapping of the net switchable polarization, the switching voltage, and the local imprint with a short measurement time (e.g., 10 min or less for 256 × 256 pixels). Furthermore, the proposed method will be useful for study of the electric-field response of domain walls. In this paper, we present some examples of experiments with LiTaO 3 single crystals and HfO 2-based ferroelectric thin films and give an overview of what kind of evaluation is possible with the local C- V mapping technique.
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U2 - 10.1063/5.0029630
DO - 10.1063/5.0029630
M3 - Article
AN - SCOPUS:85099237251
SN - 0021-8979
VL - 128
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 24
M1 - 244105
ER -