Local Density of States in Zero-Dimensional Semiconductor Structures

K. Kanisawa; M. J. Butcher; Y. Tokura; H. Yamaguchi; Y. Hirayama

doi:10.1103/PhysRevLett.87.196804

Local Density of States in Zero-Dimensional Semiconductor Structures

K. Kanisawa, M. J. Butcher, Y. Tokura, H. Yamaguchi, Y. Hirayama

Center for Science and Innovation in Spintronics (CSIS)

Research output: Contribution to journal › Article › peer-review

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Abstract

The local density of states (LDOS) within tetrahedral InAs structures, formed at the surface of InAs/GaAs(111)A, has been characterized using low-temperature scanning tunneling microscopy. The LDOS of the lowest four zero-dimensional (0D) discrete levels have been imaged in structures with a comparable size to the electron wavelength. The LDOS inside the structures is observed to be higher than that of the surrounding area at intervals of the level separation. This feature indicates the singularity of the LDOS close to the 0D resonant levels.

Original language	English
Journal	Physical Review Letters
Volume	87
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevLett.87.196804
Publication status	Published - 2001 Oct 22

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abstract = "The local density of states (LDOS) within tetrahedral InAs structures, formed at the surface of InAs/GaAs(111)A, has been characterized using low-temperature scanning tunneling microscopy. The LDOS of the lowest four zero-dimensional (0D) discrete levels have been imaged in structures with a comparable size to the electron wavelength. The LDOS inside the structures is observed to be higher than that of the surrounding area at intervals of the level separation. This feature indicates the singularity of the LDOS close to the 0D resonant levels.",

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AU - Kanisawa, K.

AU - Butcher, M. J.

AU - Tokura, Y.

AU - Yamaguchi, H.

AU - Hirayama, Y.

PY - 2001/10/22

Y1 - 2001/10/22

N2 - The local density of states (LDOS) within tetrahedral InAs structures, formed at the surface of InAs/GaAs(111)A, has been characterized using low-temperature scanning tunneling microscopy. The LDOS of the lowest four zero-dimensional (0D) discrete levels have been imaged in structures with a comparable size to the electron wavelength. The LDOS inside the structures is observed to be higher than that of the surrounding area at intervals of the level separation. This feature indicates the singularity of the LDOS close to the 0D resonant levels.

AB - The local density of states (LDOS) within tetrahedral InAs structures, formed at the surface of InAs/GaAs(111)A, has been characterized using low-temperature scanning tunneling microscopy. The LDOS of the lowest four zero-dimensional (0D) discrete levels have been imaged in structures with a comparable size to the electron wavelength. The LDOS inside the structures is observed to be higher than that of the surrounding area at intervals of the level separation. This feature indicates the singularity of the LDOS close to the 0D resonant levels.

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Local Density of States in Zero-Dimensional Semiconductor Structures

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