Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

Y. Ishikawa; M. Tashiro; K. Hazu; K. Furusawa; H. Namita; S. Nagao; K. Fujito; S. F. Chichibu

doi:10.1063/1.4767357

Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

Y. Ishikawa, M. Tashiro, K. Hazu, K. Furusawa, H. Namita, S. Nagao, K. Fujito, S. F. Chichibu

IMRAM - Division of Measurements

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13 Citations (Scopus)

Abstract

Spatio-time-resolved cathodoluminescence measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor phase epitaxy. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed inversion domain boundaries. Local cathodoluminescence lifetimes (τ_CL) for the near-band-edge (NBE) emission are shown to be sensitively position dependent. A linear relation between the equivalent internal quantum efficiency (η_int^eq) and τ_CL for the NBE emission was observed at room temperature under a weak excitation condition, and spatially resolved excitation led to the observation of the highest η_int^eq of 20 with τ_CL of 3.3 ns.

Original language	English
Article number	212106
Journal	Applied Physics Letters
Volume	101
Issue number	21
DOIs	https://doi.org/10.1063/1.4767357
Publication status	Published - 2012 Nov 19

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@article{e91333281b974114b1161cb9fcbc0920,

title = "Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence",

abstract = "Spatio-time-resolved cathodoluminescence measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor phase epitaxy. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed inversion domain boundaries. Local cathodoluminescence lifetimes (τCL) for the near-band-edge (NBE) emission are shown to be sensitively position dependent. A linear relation between the equivalent internal quantum efficiency (ηinteq) and τCL for the NBE emission was observed at room temperature under a weak excitation condition, and spatially resolved excitation led to the observation of the highest ηinteq of 20 with τCL of 3.3 ns.",

author = "Y. Ishikawa and M. Tashiro and K. Hazu and K. Furusawa and H. Namita and S. Nagao and K. Fujito and Chichibu, {S. F.}",

note = "Funding Information: This work was supported in part by NEDO programs by METI and a Grant-in-Aids for Scientific Research Nos. 23645206 and 24760250 from MEXT, Japan, and AOARD/AFOSR monitored by Dr. G. Jessen.",

year = "2012",

month = nov,

day = "19",

doi = "10.1063/1.4767357",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

AU - Ishikawa, Y.

AU - Tashiro, M.

AU - Hazu, K.

AU - Furusawa, K.

AU - Namita, H.

AU - Nagao, S.

AU - Fujito, K.

AU - Chichibu, S. F.

N1 - Funding Information: This work was supported in part by NEDO programs by METI and a Grant-in-Aids for Scientific Research Nos. 23645206 and 24760250 from MEXT, Japan, and AOARD/AFOSR monitored by Dr. G. Jessen.

PY - 2012/11/19

Y1 - 2012/11/19

N2 - Spatio-time-resolved cathodoluminescence measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor phase epitaxy. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed inversion domain boundaries. Local cathodoluminescence lifetimes (τCL) for the near-band-edge (NBE) emission are shown to be sensitively position dependent. A linear relation between the equivalent internal quantum efficiency (ηinteq) and τCL for the NBE emission was observed at room temperature under a weak excitation condition, and spatially resolved excitation led to the observation of the highest ηinteq of 20 with τCL of 3.3 ns.

AB - Spatio-time-resolved cathodoluminescence measurements were carried out on low threading dislocation density freestanding GaN substrates grown by hydride vapor phase epitaxy. High-resolution cathodoluminescence imaging allows for visualization of nonradiative recombination channels in the vicinity of accidentally formed inversion domain boundaries. Local cathodoluminescence lifetimes (τCL) for the near-band-edge (NBE) emission are shown to be sensitively position dependent. A linear relation between the equivalent internal quantum efficiency (ηinteq) and τCL for the NBE emission was observed at room temperature under a weak excitation condition, and spatially resolved excitation led to the observation of the highest ηinteq of 20 with τCL of 3.3 ns.

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JF - Applied Physics Letters

IS - 21

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ER -

Local lifetime and luminescence efficiency for the near-band-edge emission of freestanding GaN substrates determined using spatio-time-resolved cathodoluminescence

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