Local ordering and lateral growth of initial thermal oxide of si(001)

Masaharu Udagawa, Masaaki Niwa, Isao Sumita

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14 Citations (Scopus)


The initial stages of the thermal (600°C) oxide growth of Si (001) clean surfaces were studied by scanning tunneling microscopy (STM). Oxide growth starts from both step edges and terraces. At 120L, almost the entire surface was covered by oxides. Steps could still be identified, and the apparent roughness had a local minimum at this O2 exposure. These results indicate that the first layer is oxidized quite uniformly. Some local orderings of the initial oxides were observed on the terraces, which may enhance the oxide growth in the lateral (parallel to the surface) direction.

Original languageEnglish
Pages (from-to)375-378
Number of pages4
JournalJapanese journal of applied physics
Issue number1
Publication statusPublished - 1994
Externally publishedYes


  • Interface
  • O
  • Scanning tunneling microscopy
  • Si
  • Si(001)2 × 1 surface
  • Thermal oxidation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)


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