Local ordering and lateral growth of initial thermal oxide of si(001)

Masaharu Udagawa; Masaaki Niwa; Isao Sumita

doi:10.1143/JJAP.33.375

Local ordering and lateral growth of initial thermal oxide of si(001)

Masaharu Udagawa, Masaaki Niwa, Isao Sumita

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

The initial stages of the thermal (600°C) oxide growth of Si (001) clean surfaces were studied by scanning tunneling microscopy (STM). Oxide growth starts from both step edges and terraces. At 120L, almost the entire surface was covered by oxides. Steps could still be identified, and the apparent roughness had a local minimum at this O₂ exposure. These results indicate that the first layer is oxidized quite uniformly. Some local orderings of the initial oxides were observed on the terraces, which may enhance the oxide growth in the lateral (parallel to the surface) direction.

Original language	English
Pages (from-to)	375-378
Number of pages	4
Journal	Japanese journal of applied physics
Volume	33
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.33.375
Publication status	Published - 1994
Externally published	Yes

Keywords

Interface
O
Scanning tunneling microscopy
Si
Si(001)2 × 1 surface
Thermal oxidation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.33.375

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T1 - Local ordering and lateral growth of initial thermal oxide of si(001)

AU - Udagawa, Masaharu

AU - Niwa, Masaaki

AU - Sumita, Isao

PY - 1994

Y1 - 1994

N2 - The initial stages of the thermal (600°C) oxide growth of Si (001) clean surfaces were studied by scanning tunneling microscopy (STM). Oxide growth starts from both step edges and terraces. At 120L, almost the entire surface was covered by oxides. Steps could still be identified, and the apparent roughness had a local minimum at this O2 exposure. These results indicate that the first layer is oxidized quite uniformly. Some local orderings of the initial oxides were observed on the terraces, which may enhance the oxide growth in the lateral (parallel to the surface) direction.

AB - The initial stages of the thermal (600°C) oxide growth of Si (001) clean surfaces were studied by scanning tunneling microscopy (STM). Oxide growth starts from both step edges and terraces. At 120L, almost the entire surface was covered by oxides. Steps could still be identified, and the apparent roughness had a local minimum at this O2 exposure. These results indicate that the first layer is oxidized quite uniformly. Some local orderings of the initial oxides were observed on the terraces, which may enhance the oxide growth in the lateral (parallel to the surface) direction.

KW - Interface

KW - O

KW - Scanning tunneling microscopy

KW - Si

KW - Si(001)2 × 1 surface

KW - Thermal oxidation

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M3 - Article

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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ER -

Local ordering and lateral growth of initial thermal oxide of si(001)

Abstract

Keywords

ASJC Scopus subject areas

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