Local structure around in atoms in InxGa1-xN multi-quantum-wells studied by XAFS

Shinya Sasaki; Takafumi Miyanaga; Takashi Azuhata; Tomoya Uruga; Hajime Tanida; Shigefusa F. Chichibu; Takayuki Sota

doi:10.1063/1.2644572

Local structure around in atoms in In_xGa_1-xN multi-quantum-wells studied by XAFS

Shinya Sasaki, Takafumi Miyanaga, Takashi Azuhata, Tomoya Uruga, Hajime Tanida, Shigefusa F. Chichibu, Takayuki Sota

IMRAM - Division of Measurements

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in In_xGa_1-xN multi-quantum-well (MQW) structures of 10 periods with In_0.2Ga_0.8N (2.5 nm) and In_0.05Ga_0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) In_xGa_1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the In_xGa_1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.

Original language	English
Title of host publication	X-RAY ABSORPTION FINE STRUCTURE - XAFS13
Subtitle of host publication	13th International Conference
Pages	499-501
Number of pages	3
DOIs	https://doi.org/10.1063/1.2644572
Publication status	Published - 2007
Event	X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference - Stanford, CA, United States Duration: 2006 Jul 9 → 2006 Jul 14

Publication series

Name	AIP Conference Proceedings
Volume	882
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference
Country/Territory	United States
City	Stanford, CA
Period	06/7/9 → 06/7/14

Keywords

EXAFS
InGaN
LED
Multiple-quantum-well

Access to Document

10.1063/1.2644572

Cite this

@inproceedings{97a37c0484904879b344f365555c861f,

title = "Local structure around in atoms in InxGa1-xN multi-quantum-wells studied by XAFS",

abstract = "Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in InxGa1-xN multi-quantum-well (MQW) structures of 10 periods with In0.2Ga0.8N (2.5 nm) and In0.05Ga0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) InxGa1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the InxGa1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.",

keywords = "EXAFS, InGaN, LED, Multiple-quantum-well",

author = "Shinya Sasaki and Takafumi Miyanaga and Takashi Azuhata and Tomoya Uruga and Hajime Tanida and Chichibu, {Shigefusa F.} and Takayuki Sota",

year = "2007",

doi = "10.1063/1.2644572",

language = "English",

isbn = "0735403848",

series = "AIP Conference Proceedings",

pages = "499--501",

booktitle = "X-RAY ABSORPTION FINE STRUCTURE - XAFS13",

note = "X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference ; Conference date: 09-07-2006 Through 14-07-2006",

}

Sasaki, S, Miyanaga, T, Azuhata, T, Uruga, T, Tanida, H, Chichibu, SF & Sota, T 2007, Local structure around in atoms in In_xGa_1-xN multi-quantum-wells studied by XAFS. in X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference. AIP Conference Proceedings, vol. 882, pp. 499-501, X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference, Stanford, CA, United States, 06/7/9. https://doi.org/10.1063/1.2644572

Local structure around in atoms in In_xGa_1-xN multi-quantum-wells studied by XAFS. / Sasaki, Shinya; Miyanaga, Takafumi; Azuhata, Takashi et al.
X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference. 2007. p. 499-501 (AIP Conference Proceedings; Vol. 882).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Local structure around in atoms in InxGa1-xN multi-quantum-wells studied by XAFS

AU - Sasaki, Shinya

AU - Miyanaga, Takafumi

AU - Azuhata, Takashi

AU - Uruga, Tomoya

AU - Tanida, Hajime

AU - Chichibu, Shigefusa F.

AU - Sota, Takayuki

PY - 2007

Y1 - 2007

N2 - Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in InxGa1-xN multi-quantum-well (MQW) structures of 10 periods with In0.2Ga0.8N (2.5 nm) and In0.05Ga0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) InxGa1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the InxGa1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.

AB - Indium K-edge EXAFS measurements were carried out to study local structures around In atoms in InxGa1-xN multi-quantum-well (MQW) structures of 10 periods with In0.2Ga0.8N (2.5 nm) and In0.05Ga0.95N (7.5 nm). We found the following: (1) Debye-Waller factors for In-In and In-Ga atomic pairs in MQW are smaller than those in single QW (SQW) InxGa1-xN. (2) The differences in the interatomic distances of In-In and In-Ga between the horizontal and vertical direction are small. These results indicate that the strain in the InxGa1-xN layer is reduced in MQW in comparison to SQW. (3) In atoms are randomly distributed in both the horizontal and vertical directions of the sample.

KW - EXAFS

KW - InGaN

KW - LED

KW - Multiple-quantum-well

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SN - 0735403848

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T3 - AIP Conference Proceedings

SP - 499

EP - 501

BT - X-RAY ABSORPTION FINE STRUCTURE - XAFS13

T2 - X-RAY ABSORPTION FINE STRUCTURE - XAFS13: 13th International Conference

Y2 - 9 July 2006 through 14 July 2006

ER -