Localized excitons in an In0.06Ga0.94N multiple-quantum-well laser diode lased at 400 nm

Shigefusa F. Chichibu; Takashi Azuhata; Takayuki Sota; Takashi Mukai

doi:10.1063/1.1385583

Localized excitons in an In_0.06Ga_0.94N multiple-quantum-well laser diode lased at 400 nm

Shigefusa F. Chichibu, Takashi Azuhata, Takayuki Sota, Takashi Mukai

IMRAM - Division of Measurements

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

In case of wells and barriers, an InGaN multiple-quantum-well laser was shown to have InN mole fraction of 6% and 2%. Localization depth and Stokes-like shift (SS) were estimated to be 49 and 35 meV at 300 K. Due to the large band-gap bowing and In clustering, the quantum-well exciton localization was considered to be an intrinsic phenomenon in InGaN. In the density of states, the spontaneous emission was due to the recombination of excitons localized at the exponential tail-type potential minima.

Original language	English
Pages (from-to)	341-343
Number of pages	3
Journal	Applied Physics Letters
Volume	79
Issue number	3
DOIs	https://doi.org/10.1063/1.1385583
Publication status	Published - 2001 Jul 16

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abstract = "In case of wells and barriers, an InGaN multiple-quantum-well laser was shown to have InN mole fraction of 6% and 2%. Localization depth and Stokes-like shift (SS) were estimated to be 49 and 35 meV at 300 K. Due to the large band-gap bowing and In clustering, the quantum-well exciton localization was considered to be an intrinsic phenomenon in InGaN. In the density of states, the spontaneous emission was due to the recombination of excitons localized at the exponential tail-type potential minima.",

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AU - Chichibu, Shigefusa F.

AU - Azuhata, Takashi

AU - Sota, Takayuki

AU - Mukai, Takashi

PY - 2001/7/16

Y1 - 2001/7/16

N2 - In case of wells and barriers, an InGaN multiple-quantum-well laser was shown to have InN mole fraction of 6% and 2%. Localization depth and Stokes-like shift (SS) were estimated to be 49 and 35 meV at 300 K. Due to the large band-gap bowing and In clustering, the quantum-well exciton localization was considered to be an intrinsic phenomenon in InGaN. In the density of states, the spontaneous emission was due to the recombination of excitons localized at the exponential tail-type potential minima.

AB - In case of wells and barriers, an InGaN multiple-quantum-well laser was shown to have InN mole fraction of 6% and 2%. Localization depth and Stokes-like shift (SS) were estimated to be 49 and 35 meV at 300 K. Due to the large band-gap bowing and In clustering, the quantum-well exciton localization was considered to be an intrinsic phenomenon in InGaN. In the density of states, the spontaneous emission was due to the recombination of excitons localized at the exponential tail-type potential minima.

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JF - Applied Physics Letters

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ER -

Localized excitons in an In_0.06Ga_0.94N multiple-quantum-well laser diode lased at 400 nm

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