Localized high-rate deposition of zinc oxide films at atmospheric pressure using inductively coupled microplasma

Sven Stauss; Yasuo Imanishi; Hiroyuki Miyazoe; Kazuo Terashima

doi:10.1016/j.tsf.2010.03.068

Localized high-rate deposition of zinc oxide films at atmospheric pressure using inductively coupled microplasma

Sven Stauss, Yasuo Imanishi, Hiroyuki Miyazoe, Kazuo Terashima

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Linear transparent zinc oxide films were fabricated using an inductively coupled microplasma jet generated in argon under atmospheric conditions. The films were formed by the sputtering and melting of a zinc filament placed inside the plasma. Film growth rates varied between 10 to 30 nm/s for input powers between 20 and 30 W. Film roughness below 20 nm and optical transmittances up to 90% in the visible were obtained while the sheet resistances ranged between 2 × 10⁴ and 1 × 10⁵Ω/□. The presented technique may allow high-rate, localized, fabrication of functional ZnO films for optoelectronic applications.

Original language	English
Pages (from-to)	5391-5395
Number of pages	5
Journal	Thin Solid Films
Volume	518
Issue number	19
DOIs	https://doi.org/10.1016/j.tsf.2010.03.068
Publication status	Published - 2010 Jul 30
Externally published	Yes

Keywords

Plasma processing and deposition
Sputtering
Zinc oxide

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2010.03.068

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title = "Localized high-rate deposition of zinc oxide films at atmospheric pressure using inductively coupled microplasma",

abstract = "Linear transparent zinc oxide films were fabricated using an inductively coupled microplasma jet generated in argon under atmospheric conditions. The films were formed by the sputtering and melting of a zinc filament placed inside the plasma. Film growth rates varied between 10 to 30 nm/s for input powers between 20 and 30 W. Film roughness below 20 nm and optical transmittances up to 90% in the visible were obtained while the sheet resistances ranged between 2 × 104 and 1 × 105Ω/□. The presented technique may allow high-rate, localized, fabrication of functional ZnO films for optoelectronic applications.",

keywords = "Plasma processing and deposition, Sputtering, Zinc oxide",

author = "Sven Stauss and Yasuo Imanishi and Hiroyuki Miyazoe and Kazuo Terashima",

note = "Funding Information: This project was supported financially in part by the Japanese New Energy Development Organization (NEDO) and the Japanese Society for the Promotion of Science (JSPS) , Grant No. P0510 . The authors also would like to acknowledge Prof. Kaoru Kimura, Prof. Kohzo Itoh, Prof. Hiroyuki Tajima and Prof. Tohru Suemoto at the University of Tokyo for providing access to the equipment used for the ZnO film characterization, the Rigaku company for conducting the XRD experiments, and Mr. Atsushi Saito for assistance in the fabrication of the machinable ceramic supports.",

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doi = "10.1016/j.tsf.2010.03.068",

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volume = "518",

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T1 - Localized high-rate deposition of zinc oxide films at atmospheric pressure using inductively coupled microplasma

AU - Stauss, Sven

AU - Imanishi, Yasuo

AU - Miyazoe, Hiroyuki

AU - Terashima, Kazuo

N1 - Funding Information: This project was supported financially in part by the Japanese New Energy Development Organization (NEDO) and the Japanese Society for the Promotion of Science (JSPS) , Grant No. P0510 . The authors also would like to acknowledge Prof. Kaoru Kimura, Prof. Kohzo Itoh, Prof. Hiroyuki Tajima and Prof. Tohru Suemoto at the University of Tokyo for providing access to the equipment used for the ZnO film characterization, the Rigaku company for conducting the XRD experiments, and Mr. Atsushi Saito for assistance in the fabrication of the machinable ceramic supports.

PY - 2010/7/30

Y1 - 2010/7/30

N2 - Linear transparent zinc oxide films were fabricated using an inductively coupled microplasma jet generated in argon under atmospheric conditions. The films were formed by the sputtering and melting of a zinc filament placed inside the plasma. Film growth rates varied between 10 to 30 nm/s for input powers between 20 and 30 W. Film roughness below 20 nm and optical transmittances up to 90% in the visible were obtained while the sheet resistances ranged between 2 × 104 and 1 × 105Ω/□. The presented technique may allow high-rate, localized, fabrication of functional ZnO films for optoelectronic applications.

AB - Linear transparent zinc oxide films were fabricated using an inductively coupled microplasma jet generated in argon under atmospheric conditions. The films were formed by the sputtering and melting of a zinc filament placed inside the plasma. Film growth rates varied between 10 to 30 nm/s for input powers between 20 and 30 W. Film roughness below 20 nm and optical transmittances up to 90% in the visible were obtained while the sheet resistances ranged between 2 × 104 and 1 × 105Ω/□. The presented technique may allow high-rate, localized, fabrication of functional ZnO films for optoelectronic applications.

KW - Plasma processing and deposition

KW - Sputtering

KW - Zinc oxide

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JO - Thin Solid Films

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Localized high-rate deposition of zinc oxide films at atmospheric pressure using inductively coupled microplasma

Abstract

Keywords

ASJC Scopus subject areas

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