Long wavelength InGaAsP superluminescent diode and its spectrum broadening

Osamu Mikami, Hiroshi Yasaka, Yoshio Noguchi

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


This paper studies high-power and high-efficiency 1.5-μm and 1.3-μm superluminescent diodes (SLDs). Suppression of the lasing mode is integral to fabrication of high-efficiency SLDs. A novel structure of a buried bent absorbing waveguide has been developed. Output power of over 5 mW and 26 mW was realized for 1.5-μm and 1.3-μm SLDs, respectively, and spectral modulation was less than 10 percent. Emission spectrum broadening of SLDs has been attempted for the first time. Broader spectral width SLDs are required for application in optical fiber sensors because of their short coherence lengths. A stacked active layer structure having different bandgap wavelengths (STAC-SLD) has been proposed. The coherence length of fabricated STAC-SLDs is less than half that of conventional ones.

Original languageEnglish
Pages (from-to)19-25
Number of pages7
JournalElectronics and Communications in Japan, Part II: Electronics (English translation of Denshi Tsushin Gakkai Ronbunshi)
Issue number12
Publication statusPublished - 1990 Dec


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