Low activation energy, high-quality oxidation of Si and Ge using neutral beam

Akira Wada; Kazuhiko Endo; Meishoku Masahara; Chi Hsien Huang; Seiji Samukawa

doi:10.1063/1.3592576

Low activation energy, high-quality oxidation of Si and Ge using neutral beam

Akira Wada, Kazuhiko Endo, Meishoku Masahara, Chi Hsien Huang, Seiji Samukawa

IFS - Global Collaborative Research and Education Center for Integrated Flow Science (IFS-GCORE)

Research output: Contribution to journal › Article › peer-review

20 Citations (Scopus)

Abstract

In this letter, we investigated the mechanism that forms thin silicon and germanium oxide films with a high-quality interface using a low-temperature neutral beam oxidation (NBO) process. Because NBO has high reactivity due to bombardment by energetic oxygen-neutral beams even at low substrate temperatures, we found that an extremely low activation energy for the atomic layer oxidation reaction could be achieved during the process itself. As a result, there was little suboxide at the interface between the oxide films and the semiconductor, and device characteristics with a high performance were observed.

Original language	English
Article number	203111
Journal	Applied Physics Letters
Volume	98
Issue number	20
DOIs	https://doi.org/10.1063/1.3592576
Publication status	Published - 2011 May 16

Access to Document

10.1063/1.3592576

Cite this

@article{3500e97c782f4f7d982156e6f151a778,

title = "Low activation energy, high-quality oxidation of Si and Ge using neutral beam",

abstract = "In this letter, we investigated the mechanism that forms thin silicon and germanium oxide films with a high-quality interface using a low-temperature neutral beam oxidation (NBO) process. Because NBO has high reactivity due to bombardment by energetic oxygen-neutral beams even at low substrate temperatures, we found that an extremely low activation energy for the atomic layer oxidation reaction could be achieved during the process itself. As a result, there was little suboxide at the interface between the oxide films and the semiconductor, and device characteristics with a high performance were observed.",

author = "Akira Wada and Kazuhiko Endo and Meishoku Masahara and Huang, {Chi Hsien} and Seiji Samukawa",

year = "2011",

month = may,

day = "16",

doi = "10.1063/1.3592576",

language = "English",

volume = "98",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "20",

}

TY - JOUR

T1 - Low activation energy, high-quality oxidation of Si and Ge using neutral beam

AU - Wada, Akira

AU - Endo, Kazuhiko

AU - Masahara, Meishoku

AU - Huang, Chi Hsien

AU - Samukawa, Seiji

PY - 2011/5/16

Y1 - 2011/5/16

N2 - In this letter, we investigated the mechanism that forms thin silicon and germanium oxide films with a high-quality interface using a low-temperature neutral beam oxidation (NBO) process. Because NBO has high reactivity due to bombardment by energetic oxygen-neutral beams even at low substrate temperatures, we found that an extremely low activation energy for the atomic layer oxidation reaction could be achieved during the process itself. As a result, there was little suboxide at the interface between the oxide films and the semiconductor, and device characteristics with a high performance were observed.

AB - In this letter, we investigated the mechanism that forms thin silicon and germanium oxide films with a high-quality interface using a low-temperature neutral beam oxidation (NBO) process. Because NBO has high reactivity due to bombardment by energetic oxygen-neutral beams even at low substrate temperatures, we found that an extremely low activation energy for the atomic layer oxidation reaction could be achieved during the process itself. As a result, there was little suboxide at the interface between the oxide films and the semiconductor, and device characteristics with a high performance were observed.

UR - http://www.scopus.com/inward/record.url?scp=79957548842&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79957548842&partnerID=8YFLogxK

U2 - 10.1063/1.3592576

DO - 10.1063/1.3592576

M3 - Article

AN - SCOPUS:79957548842

SN - 0003-6951

VL - 98

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 203111

ER -

Low activation energy, high-quality oxidation of Si and Ge using neutral beam

Abstract

Access to Document

Other files and links

Fingerprint

Cite this