Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage

Hideki Fukano; Yuichi Akage; Yoshihiro Kawaguchi; Yasumasa Suzaki; Kenji Kishi; Takayuki Yamanaka; Yasuhiro Kondo; Hiroshi Yasaka

doi:10.1109/JSTQE.2007.905094

Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage

Hideki Fukano, Yuichi Akage, Yoshihiro Kawaguchi, Yasumasa Suzaki, Kenji Kishi, Takayuki Yamanaka, Yasuhiro Kondo, Hiroshi Yasaka

Research output: Contribution to journal › Article › peer-review

34 Citations (Scopus)

Abstract

We clarified experimentally that an EA-DFB laser in which the EAM and DFB parts are coupled with a passive waveguide provides a large bandwidth, even when a large reverse bias is applied to the EAM. This allows the chip to operate in a negative-chirp condition. We fabricated an EA-DFB module terminated with a 50 Ω resistor through a dc-block capacitor to suppress the increase in dc current as the reverse bias increases. A module equipped with our new EA-DFB chip successfully transmitted data over a distance of 3 km at a rate of 40 Gbit/s and at a driving voltage as low as 2 V.

Original language	English
Pages (from-to)	1129-1134
Number of pages	6
Journal	IEEE Journal on Selected Topics in Quantum Electronics
Volume	13
Issue number	5
DOIs	https://doi.org/10.1109/JSTQE.2007.905094
Publication status	Published - 2007 Sept
Externally published	Yes

Keywords

DFB laser
Electroabsorption
Electroabsorption modulator (EAM)
Electroabsorption modulator integrated DFB laser (EA-DFB)
Low driving voltage

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/JSTQE.2007.905094

Cite this

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title = "Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage",

abstract = "We clarified experimentally that an EA-DFB laser in which the EAM and DFB parts are coupled with a passive waveguide provides a large bandwidth, even when a large reverse bias is applied to the EAM. This allows the chip to operate in a negative-chirp condition. We fabricated an EA-DFB module terminated with a 50 Ω resistor through a dc-block capacitor to suppress the increase in dc current as the reverse bias increases. A module equipped with our new EA-DFB chip successfully transmitted data over a distance of 3 km at a rate of 40 Gbit/s and at a driving voltage as low as 2 V.",

keywords = "DFB laser, Electroabsorption, Electroabsorption modulator (EAM), Electroabsorption modulator integrated DFB laser (EA-DFB), Low driving voltage",

author = "Hideki Fukano and Yuichi Akage and Yoshihiro Kawaguchi and Yasumasa Suzaki and Kenji Kishi and Takayuki Yamanaka and Yasuhiro Kondo and Hiroshi Yasaka",

year = "2007",

month = sep,

doi = "10.1109/JSTQE.2007.905094",

language = "English",

volume = "13",

pages = "1129--1134",

journal = "IEEE Journal on Selected Topics in Quantum Electronics",

issn = "1077-260X",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

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T1 - Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage

AU - Fukano, Hideki

AU - Akage, Yuichi

AU - Kawaguchi, Yoshihiro

AU - Suzaki, Yasumasa

AU - Kishi, Kenji

AU - Yamanaka, Takayuki

AU - Kondo, Yasuhiro

AU - Yasaka, Hiroshi

PY - 2007/9

Y1 - 2007/9

N2 - We clarified experimentally that an EA-DFB laser in which the EAM and DFB parts are coupled with a passive waveguide provides a large bandwidth, even when a large reverse bias is applied to the EAM. This allows the chip to operate in a negative-chirp condition. We fabricated an EA-DFB module terminated with a 50 Ω resistor through a dc-block capacitor to suppress the increase in dc current as the reverse bias increases. A module equipped with our new EA-DFB chip successfully transmitted data over a distance of 3 km at a rate of 40 Gbit/s and at a driving voltage as low as 2 V.

AB - We clarified experimentally that an EA-DFB laser in which the EAM and DFB parts are coupled with a passive waveguide provides a large bandwidth, even when a large reverse bias is applied to the EAM. This allows the chip to operate in a negative-chirp condition. We fabricated an EA-DFB module terminated with a 50 Ω resistor through a dc-block capacitor to suppress the increase in dc current as the reverse bias increases. A module equipped with our new EA-DFB chip successfully transmitted data over a distance of 3 km at a rate of 40 Gbit/s and at a driving voltage as low as 2 V.

KW - DFB laser

KW - Electroabsorption

KW - Electroabsorption modulator (EAM)

KW - Electroabsorption modulator integrated DFB laser (EA-DFB)

KW - Low driving voltage

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Low chirp operation of 40 Gbit/s electroabsorption modulator integrated DFB laser module with low driving voltage

Abstract

Keywords

ASJC Scopus subject areas

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