TY - GEN
T1 - Low-current domain wall motion MRAM with perpendicularly magnetized CoFeB/MgO magnetic tunnel junction and underlying hard magnets
AU - Suzuki, T.
AU - Tanigawa, H.
AU - Kobayashi, Y.
AU - Mori, K.
AU - Ito, Y.
AU - Ozaki, Y.
AU - Suemitsu, K.
AU - Kitamura, T.
AU - Nagahara, K.
AU - Kariyada, E.
AU - Ohshima, N.
AU - Fukami, S.
AU - Yamanouchi, M.
AU - Ikeda, S.
AU - Hayashi, M.
AU - Sakao, M.
AU - Ohno, H.
PY - 2013
Y1 - 2013
N2 - We have developed magnetic domain wall (DW) motion cells with a perpendicularly magnetized CoFeB free layer and underlying hard magnets. Low current writing operation of 0.16 mA and a high MR ratio of 80% were attained for the 130-nm-wide free layer. Write/read operation for a 16kb array and high endurance features were also confirmed.
AB - We have developed magnetic domain wall (DW) motion cells with a perpendicularly magnetized CoFeB free layer and underlying hard magnets. Low current writing operation of 0.16 mA and a high MR ratio of 80% were attained for the 130-nm-wide free layer. Write/read operation for a 16kb array and high endurance features were also confirmed.
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M3 - Conference contribution
AN - SCOPUS:84883353094
SN - 9784863483477
T3 - Digest of Technical Papers - Symposium on VLSI Technology
SP - T138-T139
BT - 2013 Symposium on VLSI Technology, VLSIT 2013 - Digest of Technical Papers
T2 - 2013 Symposium on VLSI Technology, VLSIT 2013
Y2 - 11 June 2013 through 13 June 2013
ER -