Low energy electron stimulated etching of thin Si oxide layer using STM: Nano-fabrication with a localized low-energy e-beam

Direct nanofabrication of Si oxide was demonstrated using scanning tunneling microscopy (STM). The direct fabrication of Si oxide with low-energy electron stimulated reaction (LEESR) is possible using STM, including the epitaxial growth of nanostructures after the fabrication. The LEESR/STM method combines a localized low-energy e-beam with STM in which a field emission current up to approximately 1 μA and of 30-160 eV in energy can be extracted from the tip. By exposing this e-beam to a thin Si oxide layer followed with a thermal annealing, surface reactions can be stimulated and then windows can be cut through the oxide layer.