Low-frequency noise in submicron GaAs/AlxGa1- xAs Hall devices

Jens Müller, Yongqing Li, Stephan Molnár, Yuzo Ohno, Hideo Ohno

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)


We present systematic studies of the excess low-frequency noise in GaAs/AlxGa1-xAs heterostructure 2DES Hall devices. We studied structures of various sizes made from different wafer materials. In larger samples a significant suppression of the 1/f noise level by gating has been observed. In structures as small as (0.45×0.45) μm2 the overall noise level is significantly higher and non-Gaussian-type noise dominates at all temperatures. Random telegraph fluctuations finally limit the device miniaturization in these materials.

Original languageEnglish
Pages (from-to)1161-1164
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Volume290-291 PART 2
Publication statusPublished - 2005 Apr


  • Hall effect
  • III-V Semiconductor heterostructures
  • Noise reduction


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