Low-frequency noise in submicron GaAs/AlxGa1- xAs Hall devices

Jens Müller; Yongqing Li; Stephan Molnár; Yuzo Ohno; Hideo Ohno

doi:10.1016/j.jmmm.2004.11.502

Low-frequency noise in submicron GaAs/Al_xGa_1- _xAs Hall devices

Jens Müller, Yongqing Li, Stephan Molnár, Yuzo Ohno, Hideo Ohno

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Abstract

We present systematic studies of the excess low-frequency noise in GaAs/Al_xGa_1-xAs heterostructure 2DES Hall devices. We studied structures of various sizes made from different wafer materials. In larger samples a significant suppression of the 1/f noise level by gating has been observed. In structures as small as (0.45×0.45) μm² the overall noise level is significantly higher and non-Gaussian-type noise dominates at all temperatures. Random telegraph fluctuations finally limit the device miniaturization in these materials.

Original language	English
Pages (from-to)	1161-1164
Number of pages	4
Journal	Journal of Magnetism and Magnetic Materials
Volume	290-291 PART 2
DOIs	https://doi.org/10.1016/j.jmmm.2004.11.502
Publication status	Published - 2005 Apr

Keywords

Hall effect
III-V Semiconductor heterostructures
Noise reduction

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10.1016/j.jmmm.2004.11.502

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@article{327ee129515044ff98771634a2da5d46,

title = "Low-frequency noise in submicron GaAs/AlxGa1- xAs Hall devices",

abstract = "We present systematic studies of the excess low-frequency noise in GaAs/AlxGa1-xAs heterostructure 2DES Hall devices. We studied structures of various sizes made from different wafer materials. In larger samples a significant suppression of the 1/f noise level by gating has been observed. In structures as small as (0.45×0.45) μm2 the overall noise level is significantly higher and non-Gaussian-type noise dominates at all temperatures. Random telegraph fluctuations finally limit the device miniaturization in these materials.",

keywords = "Hall effect, III-V Semiconductor heterostructures, Noise reduction",

author = "Jens M{\"u}ller and Yongqing Li and Stephan Moln{\'a}r and Yuzo Ohno and Hideo Ohno",

note = "Funding Information: Work supported by NSF Grant DMR0072395 and DARPA through ONR Grants N-00014-99-1-1094 and MDA-972-02-1-0002. J.M. acknowledges support from the Max-Planck Society through the Institute for Chemical Physics of Solids, Dresden, Germany.",

year = "2005",

month = apr,

doi = "10.1016/j.jmmm.2004.11.502",

language = "English",

volume = "290-291 PART 2",

pages = "1161--1164",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier",

}

TY - JOUR

T1 - Low-frequency noise in submicron GaAs/AlxGa1- xAs Hall devices

AU - Müller, Jens

AU - Li, Yongqing

AU - Molnár, Stephan

AU - Ohno, Yuzo

AU - Ohno, Hideo

N1 - Funding Information: Work supported by NSF Grant DMR0072395 and DARPA through ONR Grants N-00014-99-1-1094 and MDA-972-02-1-0002. J.M. acknowledges support from the Max-Planck Society through the Institute for Chemical Physics of Solids, Dresden, Germany.

PY - 2005/4

Y1 - 2005/4

N2 - We present systematic studies of the excess low-frequency noise in GaAs/AlxGa1-xAs heterostructure 2DES Hall devices. We studied structures of various sizes made from different wafer materials. In larger samples a significant suppression of the 1/f noise level by gating has been observed. In structures as small as (0.45×0.45) μm2 the overall noise level is significantly higher and non-Gaussian-type noise dominates at all temperatures. Random telegraph fluctuations finally limit the device miniaturization in these materials.

AB - We present systematic studies of the excess low-frequency noise in GaAs/AlxGa1-xAs heterostructure 2DES Hall devices. We studied structures of various sizes made from different wafer materials. In larger samples a significant suppression of the 1/f noise level by gating has been observed. In structures as small as (0.45×0.45) μm2 the overall noise level is significantly higher and non-Gaussian-type noise dominates at all temperatures. Random telegraph fluctuations finally limit the device miniaturization in these materials.

KW - Hall effect

KW - III-V Semiconductor heterostructures

KW - Noise reduction

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DO - 10.1016/j.jmmm.2004.11.502

M3 - Article

AN - SCOPUS:14944342671

SN - 0304-8853

VL - 290-291 PART 2

SP - 1161

EP - 1164

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

ER -

Low-frequency noise in submicron GaAs/Al_xGa_1- _xAs Hall devices

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