Abstract
A study was conducted on the excitation intensity dependence of THz electromagnetic waves emitted from the surface of an undoped InAs wafer excited by femtosecond laser pulses without an eternal magnetic field to clarify the relation between the spectral profile and the amplitude of the THz waves. It was found that the spectral amplitude of the THz waves was enhanced in the low-frequency regime when the excitation intensity was increased.
Original language | English |
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Pages (from-to) | 2141-2145 |
Number of pages | 5 |
Journal | Journal of Applied Physics |
Volume | 95 |
Issue number | 4 |
DOIs | |
Publication status | Published - 2004 Feb 15 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy(all)