TY - JOUR
T1 - Low-intensity ultraviolet light detector using a surface acoustic wave oscillator based on ZnO/LiNbO3 bilayer structure
AU - Kumar, Sanjeev
AU - Sharma, Parmanand
AU - Sreenivas, K.
PY - 2005/8/1
Y1 - 2005/8/1
N2 - A surface acoustic wave (SAW) based ultraviolet (UV) light detector configured in the form of a SAW oscillator is investigated. The SAW oscillator consists of a ZnO/LiNbO3 bilayer structure, where ZnO is used as UV light sensing material and LiNbO3 is used to excite the surface acoustic waves. The SAW oscillator is characterized for its functional performance at different Vcc, the voltage to the oscillator circuit, under different levels of UV light illumination. The changes in the amplitude and the frequency shift of the SAW oscillator output exhibit a linear variation with UV light intensity. The SAW UV detector is shown to be highly sensitive at lower Vcc. A low level UV intensity of 450 nW cm-2 is easily detectable and the voltage responsivity is estimated to be ∼24 kV W-1.
AB - A surface acoustic wave (SAW) based ultraviolet (UV) light detector configured in the form of a SAW oscillator is investigated. The SAW oscillator consists of a ZnO/LiNbO3 bilayer structure, where ZnO is used as UV light sensing material and LiNbO3 is used to excite the surface acoustic waves. The SAW oscillator is characterized for its functional performance at different Vcc, the voltage to the oscillator circuit, under different levels of UV light illumination. The changes in the amplitude and the frequency shift of the SAW oscillator output exhibit a linear variation with UV light intensity. The SAW UV detector is shown to be highly sensitive at lower Vcc. A low level UV intensity of 450 nW cm-2 is easily detectable and the voltage responsivity is estimated to be ∼24 kV W-1.
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U2 - 10.1088/0268-1242/20/8/L01
DO - 10.1088/0268-1242/20/8/L01
M3 - Article
AN - SCOPUS:22844438407
SN - 0268-1242
VL - 20
SP - L27-L30
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
IS - 8
ER -