TY - JOUR
T1 - Low-k Fluorinated Amorphous Carbon Interlayer Technology for Quarter Micron Devices
AU - Matsubara, Y.
AU - Endo, K.
AU - Tatsumi, T.
AU - Ueno, H.
AU - Sugai, K.
AU - Horiuchi, T.
N1 - Publisher Copyright:
© 1996 IEEE.
PY - 1996
Y1 - 1996
N2 - We have developed a new interlayer technology that attain 50% reduction in capacitance and keep good process compatibility with current Chemical Mechanical Polishing (CMP) based multi-level metallization (MLM) process. This technology uses fluorinated amorphous carbon (a-C:F) with a dielectric constant of 2.3, sandwiched between layers of Si02, which are formed in sequential by high density plasma-chemical vapor deposition (HDP-CVD) technique. Top Si02 layer assures oxygen plasma resistance during via etching, metal etching, and resist removal.
AB - We have developed a new interlayer technology that attain 50% reduction in capacitance and keep good process compatibility with current Chemical Mechanical Polishing (CMP) based multi-level metallization (MLM) process. This technology uses fluorinated amorphous carbon (a-C:F) with a dielectric constant of 2.3, sandwiched between layers of Si02, which are formed in sequential by high density plasma-chemical vapor deposition (HDP-CVD) technique. Top Si02 layer assures oxygen plasma resistance during via etching, metal etching, and resist removal.
UR - http://www.scopus.com/inward/record.url?scp=0030409311&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0030409311&partnerID=8YFLogxK
U2 - 10.1109/IEDM.1996.553605
DO - 10.1109/IEDM.1996.553605
M3 - Conference article
AN - SCOPUS:0030409311
SN - 0163-1918
SP - 369
EP - 372
JO - Technical Digest - International Electron Devices Meeting
JF - Technical Digest - International Electron Devices Meeting
T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting
Y2 - 8 December 1996 through 11 December 1996
ER -