We have developed a new interlayer technology that attain 50% reduction in capacitance and keep good process compatibility with current Chemical Mechanical Polishing (CMP) based multi-level metallization (MLM) process. This technology uses fluorinated amorphous carbon (a-C:F) with a dielectric constant of 2.3, sandwiched between layers of Si02, which are formed in sequential by high density plasma-chemical vapor deposition (HDP-CVD) technique. Top Si02 layer assures oxygen plasma resistance during via etching, metal etching, and resist removal.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|Publication status||Published - 1996|
|Event||Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA|
Duration: 1996 Dec 8 → 1996 Dec 11