Low-k Fluorinated Amorphous Carbon Interlayer Technology for Quarter Micron Devices

Y. Matsubara, K. Endo, T. Tatsumi, H. Ueno, K. Sugai, T. Horiuchi

Research output: Contribution to journalConference articlepeer-review

9 Citations (Scopus)


We have developed a new interlayer technology that attain 50% reduction in capacitance and keep good process compatibility with current Chemical Mechanical Polishing (CMP) based multi-level metallization (MLM) process. This technology uses fluorinated amorphous carbon (a-C:F) with a dielectric constant of 2.3, sandwiched between layers of Si02, which are formed in sequential by high density plasma-chemical vapor deposition (HDP-CVD) technique. Top Si02 layer assures oxygen plasma resistance during via etching, metal etching, and resist removal.

Original languageEnglish
Pages (from-to)369-372
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 1996
EventProceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA
Duration: 1996 Dec 81996 Dec 11


Dive into the research topics of 'Low-k Fluorinated Amorphous Carbon Interlayer Technology for Quarter Micron Devices'. Together they form a unique fingerprint.

Cite this