TY - GEN
T1 - Low leakage current Al2O3 metal-insulator-metal capacitors formed by atomic layer deposition at optimized process temperature and O2 post deposition annealing
AU - Koda, Y.
AU - Sugita, H.
AU - Suwa, T.
AU - Kuroda, R.
AU - Goto, T.
AU - Teramoto, A.
AU - Sugawa, S.
N1 - Publisher Copyright:
©The Electrochemical Society.
PY - 2016
Y1 - 2016
N2 - High-k oxide material with a high capacitance density, low leakage current density, high-dielectric breakdown voltage and small quadruple voltage coefficient of the capacitance is important for on-chip metal-insulator-metal (MIM) capacitors as well as gate insulators for semiconductor power devices. So in order to improve the quality of such films, a post-deposition process, such as annealing is expected to be effective. In this paper, we carried out various annealing steps after deposition of Al2O3 films with thermal ALD. The electrical characteristics of these Al2O3 films were evaluated. Annealing was proven to be effective in improving the Al2O3 film quality decrease the leakage current and the fixed charge. For O2 annealing at 400°C of MIM capacitor structures containing Al2O3 films deposited with thermal ALD using H2O at a relatively low temperature of 75°C. We achieved a leakage current density of 10-9 A/cm2 level and a capacitance density above 10fF/μm2. However, it it is necessary to improve the voltage dependence of the capacitance. For future optimization not only the post-deposition process should be investigated but also the ALD deposition itself, including the selection of the oxidizing co-reactant.
AB - High-k oxide material with a high capacitance density, low leakage current density, high-dielectric breakdown voltage and small quadruple voltage coefficient of the capacitance is important for on-chip metal-insulator-metal (MIM) capacitors as well as gate insulators for semiconductor power devices. So in order to improve the quality of such films, a post-deposition process, such as annealing is expected to be effective. In this paper, we carried out various annealing steps after deposition of Al2O3 films with thermal ALD. The electrical characteristics of these Al2O3 films were evaluated. Annealing was proven to be effective in improving the Al2O3 film quality decrease the leakage current and the fixed charge. For O2 annealing at 400°C of MIM capacitor structures containing Al2O3 films deposited with thermal ALD using H2O at a relatively low temperature of 75°C. We achieved a leakage current density of 10-9 A/cm2 level and a capacitance density above 10fF/μm2. However, it it is necessary to improve the voltage dependence of the capacitance. For future optimization not only the post-deposition process should be investigated but also the ALD deposition itself, including the selection of the oxidizing co-reactant.
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U2 - 10.1149/07204.0091ecst
DO - 10.1149/07204.0091ecst
M3 - Conference contribution
AN - SCOPUS:84991499718
T3 - ECS Transactions
SP - 91
EP - 100
BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
A2 - Roozeboom, F.
A2 - Narayanan, V.
A2 - Kakushima, K.
A2 - Timans, P. J.
A2 - Gusev, E. P.
A2 - Karim, Z.
A2 - De Gendt, S.
PB - Electrochemical Society Inc.
T2 - Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting
Y2 - 29 May 2016 through 2 June 2016
ER -