Abstract
Magnetic materials with low Gilbert damping and low magnetization are necessary for the realization of faster or more energy-efficient spintronic devices based on spin-transfer-torque. Here, we report Gilbert damping in epitaxially grown equiatomic quaternary CoFeMnSi Heusler alloy films. The 10 nm-thick films show a saturation magnetization of MS = 630 emu cm-3 and a Gilbert damping constant of , which are relatively small values among transition metal ferromagnets, in addition to its soft magnetic properties. The physical origin of the relatively low damping and the possibility of a further reduction of α to the ultra-low damping regime ∼10-4 are discussed in terms of the spin-gapless-like electronic structure and the effect of the chemical order computed from first principles.
Original language | English |
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Article number | 495001 |
Journal | Journal Physics D: Applied Physics |
Volume | 51 |
Issue number | 49 |
DOIs | |
Publication status | Published - 2018 Oct 11 |
Keywords
- Gilbert damping
- Heusler alloys
- magnetic properties
- magnetization dynamics
- spin-gapless semiconductor
- spintronics
- thin films